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C3M0120100K

Part No C3M0120100K
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1000V 22A TO247-4L
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Cree/Wolfspeed
Series C3M™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 155mOhm @ 15A, 15V
Vgs(th) (Max) @ Id 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 15 V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 600 V
Power Dissipation (Max) 83W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
Base Product Number C3M0120100
Standard Package 30 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 847301-C3M0120100K
Ultra Librarian 3D Model Ultra Librarian C3M0120100K CAD Model

Description

The C3M0120100K is a SiCFET (Silicon Carbide) transistor designed for various applications. It is an N-channel FET with a drain to source voltage (Vdss) of 1000 V.

  • Vdss: 1000 V
  • Id @ 25°C: 22A
  • Rds On: 155mOhm @ 15A and 15V
  • Mounting Type: Through-hole
  • Package: TO-247-4
  • Gate Charge (Qg): 21.5 nC @ 15V
  • Input Capacitance (Ciss): 350 pF @ 600V
  • Operating Temperature: -55°C to 150°C
  • Product Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $15.7447 $62.9788
9+ $12.9187 $116.2683
14+ $12.5150 $175.2100
20+ $12.1113 $242.2260
25+ $11.7075 $292.6875
34+ $10.4964 $356.8776
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,200 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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