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Same model may have multiple batches, images only for reference.
C3M0350120D Real Image
Same model may have multiple batches, images only for reference.

C3M0350120D

Part No C3M0350120D
Manufacturer Cree/Wolfspeed
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1200V 7.6A TO247-3 / N-Channel 1200 V 7.6A (Tc) 50W (Tc) Through Hole TO-247-3
Datasheet
C3M0350120D Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Wolfspeed, Inc.
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 455mOhm @ 3.6A, 15V
Vgs(th) (Max) @ Id 3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 15 V
Vgs (Max) +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 345 pF @ 1000 V
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247-3
Case / Package TO-247-3
Base Product Number C3M0350120
Moisture Sensitivity Level (MSL) Not Applicable
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 1697-C3M0350120D
Standard Package 30
Win Source Part Number 1324543-C3M0350120D
Ultra Librarian 3D Model Ultra Librarian C3M0350120D CAD Model

Description

C3M0350120D is an N-Channel SiCFET (Silicon Carbide Field Effect Transistor) manufactured by Wolfspeed, Inc.

  • Package: TO-247-3
  • Standard Package: 30
  • Maximum Voltage Rating: 1200V
  • Continuous Drain Current: 7.6A (Tc)
  • On-Resistance: 455mOhm @ 3.6A, 15V
  • Supply and Demand Status: Limited
  • Maximum Gate Charge: 19nC @ 15V
  • Maximum Input Capacitance: 345pF @ 1000V

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.0026 $54.0234
18+ $5.6154 $101.0772
28+ $5.4218 $151.8104
40+ $5.0345 $201.3800
52+ $4.8409 $251.7268
65+ $4.6472 $302.0680
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Availability: 3,010 pieces
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