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CY62147EV30LL-45B2XIT

Part No CY62147EV30LL-45B2XIT
Manufacturer Cypress Semiconductor Corp
Catalog IT infrastructure Memory
Description SRAM 256Kx16
Sample
Rohs State rohs
ECAD Module
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Category IT infrastructure Memory
Win Source Part Number 1454707-CY62147EV30LL-45B2XIT
Manufacturer Cypress Semiconductor Corp
Package Tape & Reel (TR)
Product Status Active
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 4Mbit
Memory Organization 256K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 45ns
Access Time 45ns
Voltage - Supply 2.2 V ~ 3.6 V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 48-VFBGA
Supplier Device Package 48-VFBGA (6x8)
Ultra Librarian 3D Model Ultra Librarian CY62147EV30LL-45B2XIT CAD Model

Description

The CY62147EV30LL-45B2XIT by Cypress is a high-performance, low-power Static Random-Access Memory (SRAM) device offering a storage capacity of 256Kx16 bits. This SRAM is designed to deliver high-speed data access and low latency, making it suitable for a variety of applications that require fast and reliable temporary data storage, such as caching in networking equipment, and as a buffer in digital signal processing. Its low standby current makes it ideal for battery-powered devices where power efficiency is critical. The robust design ensures stable operation over a wide temperature range, making it versatile for use in both commercial and industrial environments. Cypress's dedication to quality and reliability is seen in this product, providing engineers with a reliable memory solution for their high-speed computing needs.

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