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S29GL512S11FAIV23

Part No S29GL512S11FAIV23
Manufacturer Cypress Semiconductor Corp
Catalog Unclassified Memory
Description IC FLASH 512MBIT PARALLEL 64BGA  /  FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 110 ns 64-FBGA (11x13)
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Cypress Semiconductor Corp
Series GL-S
Package Tape & Reel (TR)
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mb (32M x 16)
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Access Time 110 ns
Voltage - Supply 1.65V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 64-LBGA
Supplier Device Package 64-FBGA (11x13)
Base Product Number S29GL512
Standard Package 1,600
RoHS Status RoHS non-compliant
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Win Source Part Number 1254919-S29GL512S11FAIV23
Ultra Librarian 3D Model Ultra Librarian S29GL512S11FAIV23 CAD Model

Description

The S29GL512S11FAIV23 is a high-performance non-volatile Flash memory chip manufactured by Cypress Semiconductor Corp.

  • Memory Size: 512Mb (32M x 16)
  • Access Time: 110 ns
  • Memory Type: non-volatile
  • Technology: Flash - NOR
  • Category: integrated circuits (ICs) memory
  • Series: GL-S
  • Package: 64-LBGA
  • Operating Temperature: -40°C to 85°C (TA)
  • Write Cycle Time: 60ns
  • Memory Interface: parallel
  • Supply Voltage: 1.65V to 3.6V
  • Commonly Used: in memory-intensive applications such as servers, routers, and switches

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