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Same model may have multiple batches, images only for reference.
S29GL512T11FHIV10 Real Image
Same model may have multiple batches, images only for reference.

S29GL512T11FHIV10

Part No S29GL512T11FHIV10
Manufacturer Cypress Semiconductor Corp
Catalog Flash
Description IC FLASH 512MBIT PARALLEL 64FBGA  /  FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 110 ns 64-FBGA (13x11)
Datasheet
S29GL512T11FHIV10 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Cypress Semiconductor Corp
Series GL-T
Package Tray
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mb (64M x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Access Time 110 ns
Voltage - Supply 1.65V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting SMD (SMT)
Package / Case 64-LBGA
Supplier Device Package 64-FBGA (13x11)
Base Product Number S29GL512
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Other Names S29GL512T11FHIV10-ND,CYPCYPS29GL512T11FHIV10,S29GL512T11FHIV10Y,2015-S29GL512T11FHIV10,-S29GL512T11FHIV10,428-3618,2156-S29GL512T11FHIV10
Standard Package 900
Win Source Part Number 1089941-S29GL512T11FHIV10
Ultra Librarian 3D Model Ultra Librarian S29GL512T11FHIV10 CAD Model

Description

The S29GL512T11FHIV10 is a 512Mb (64M x 8) Non-Volatile FLASH - NOR memory integrated circuit from Cypress Semiconductor Corp. It has an access time of 110 ns and operates at a voltage supply range of 1.65V to 3.6V.

  • Memory Interface: Parallel
  • Memory Format: FLASH
  • Package: 64-LBGA
  • Write Cycle Time for Word: 60ns
  • Product Series: GL-T
  • Suitable for: use in applications that require non-volatile memory.

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