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S29GL512T13DHNV23

Part No S29GL512T13DHNV23
Manufacturer Cypress Semiconductor Corp
Catalog Unclassified Memory
Description IC FLASH 512MBIT PARALLEL 64FBGA  /  FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 130 ns 64-FBGA (9x9)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Integrated Circuits (ICs)>Memory
Mfr Cypress Semiconductor Corp
Series GL-T
Package Tape & Reel (TR)
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mb (64M x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 60ns
Access Time 130 ns
Voltage - Supply 1.65V ~ 3.6V
Temperature Range - Operating -40°C ~ 125°C (TA)
Mounting SMD (SMT)
Package / Case 64-LBGA
Supplier Device Package 64-FBGA (9x9)
Base Product Number S29GL512
Standard Package 2,200
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B1A
HTSUS 8542.32.0071
Win Source Part Number 1254819-S29GL512T13DHNV23
Ultra Librarian 3D Model Ultra Librarian S29GL512T13DHNV23 CAD Model

Description

The S29GL512T13DHNV23 is a non-volatile FLASH-NOR memory chip from Cypress Semiconductor Corp.

  • Series: GL-T series
  • Memory Size: 512Mb (64M x 8)
  • Access Time: 130 ns
  • Voltage Range: 1.65V to 3.6V
  • Write Cycle Time: 60ns
  • Memory Interface: parallel
  • Package: 64-LBGA
  • Suitable Use: in a wide range of applications, including automotive, industrial, and consumer electronics
  • Description: a reliable and high-performance memory chip that can store a large amount of data

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