The S34ML01G100THI000 is a 1 Gbit (128M x 8) NAND Flash memory device manufactured by Cypress Semiconductor Corp. This device utilizes a single-level cell (SLC) architecture, providing high performance and reliability. It operates at 3.3V and is available in a 48-TSOP package. This NAND Flash memory is designed for mass storage applications and embedded systems.

Applications

• Solid-state drives (SSDs): As a storage medium in low-capacity SSDs.
• USB flash drives: Providing non-volatile storage.
• Memory cards: Including SD and microSD cards.
• Embedded systems: Used in devices like digital cameras, MP3 players, and mobile phones.
• Data loggers: For storing collected data in industrial and scientific applications.

Features

• Capacity: 1 Gbit (128M x 8).
• Organization: x8 I/O configuration.
• Operating Voltage: 3.3V.
• Interface: Asynchronous interface.
• Package: 48-TSOP.
• Page Size: 2KB + 64 bytes spare area.
• Block Size: 128KB.
• Endurance: 100,000 program/erase cycles.
• Data Retention: 10 years.

Benefits

• High Performance: Fast read and write speeds due to the SLC architecture.
• Reliability: High endurance and data retention, ensuring long-term data storage.
• Low Power Consumption: Suitable for portable devices.
• Compact Size: TSOP package allows for integration in small form-factor devices.
• Cost-Effective: Provides a balance between performance and cost.

Additional Details

The S34ML01G100THI000 NAND Flash memory includes features such as wear leveling to extend the lifespan of the device. It also supports error correction code (ECC) to ensure data integrity. The device is compliant with RoHS standards. The operating temperature ranges from -40°C to +85°C, making it suitable for a wide range of environmental conditions.

For specific technical details, refer to the Cypress Semiconductor Corp datasheet for the S34ML01G100THI000. The datasheet contains information on timing characteristics, electrical specifications, and package dimensions.