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2DB1119S-13

Part No 2DB1119S-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 25V 1A SOT89-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 25V
Max Vce (sat) 700mV @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 140 @ 50mA, 2V
Maximum Power Dissipation 1W
Frequency - Transition 200MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-89-3
Win Source Part Number 197462-2DB1119S-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2DB1119S-13 CAD Model

Description

Product Overview: 2DB1119S-13 from Diodes Incorporated

The 2DB1119S-13 is a high-performance PNP bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This transistor is part of Diodes Incorporated's extensive range of discrete, analog, and mixed-signal components tailored for various electronic applications.

With its small surface-mount package, the 2DB1119S-13 is ideal for space-constrained applications. It is housed in a SOT-23 package, which is widely used in the industry due to its compact size and ease of integration into various electronic circuits. The transistor is capable of handling a collector current of up to -500mA, making it suitable for moderate power amplification and switching applications.

Key Features:

  • PNP Bipolar Junction Transistor: The 2DB1119S-13 is a PNP transistor, which means it is designed for positive-negative-positive configuration and is primarily used for amplification and switching purposes.
  • High Current Capability: With a collector current rating of -500mA, this component can handle a significant amount of current for its size.
  • Low Saturation Voltage: The device has a low collector-emitter saturation voltage, which enhances its efficiency by minimizing power loss during operation.
  • SOT-23 Package: The small SOT-23 package is ideal for applications where board space is at a premium.
  • High Power Dissipation: The 2DB1119S-13 comes with a power dissipation rating that ensures reliable operation even in demanding conditions.

Applications:

The 2DB1119S-13 can be used in a wide range of electronic circuits, including but not limited to:

  • Load switches
  • Power management circuits
  • Signal amplification
  • Linear amplifiers
  • Audio amplifiers
  • Driver stages in hi-fi amplifiers and television circuits

With its robust performance characteristics, the 2DB1119S-13 from Diodes Incorporated is an excellent choice for designers looking for a reliable PNP transistor for their next project. Whether it's for consumer electronics, industrial applications, or automotive systems, this component provides the functionality needed for efficient and effective electrical performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
305+ $0.1917 $58.4685
735+ $0.1573 $115.6155
1,140+ $0.1524 $173.7360
1,570+ $0.1475 $231.5750
2,030+ $0.1425 $289.2750
2,715+ $0.1277 $346.7055
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 305 pcs
Order Increment : 1 pcs
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