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2DB1132R-13-GIGA

Part No 2DB1132R-13-GIGA
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer Diodes Incorporated
Win Source Part Number 152944-2DB1132R-13-GIGA
Popularity Low
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2DB1132R-13-GIGA CAD Model

Description

The 2DB1132R-13-GIGA is a high-performance PNP bipolar junction transistor (BJT) from Diodes Incorporated, a leading manufacturer in the semiconductor industry. This product is designed to offer efficient current amplification and switching with a focus on reliability and consistency in various electronic applications.

Key Features

  • Transistor Polarity: PNP - This indicates that the majority carriers responsible for current flow in the transistor are holes, making it suitable for positive signal amplification.
  • Collector-Base Voltage (VCBO): It can withstand a maximum voltage of 80V from collector to base, which ensures stable operation in high-voltage applications.
  • Collector-Emitter Voltage (VCEO): The maximum voltage across the collector-emitter junction is 50V, which is crucial for preventing breakdown during operation.
  • Emitter-Base Voltage (VEBO): With an emitter-base voltage of 5V, the 2DB1132R-13-GIGA can handle sufficient voltage before the emitter-base junction breaks down.
  • Continuous Collector Current (IC): This transistor can handle a continuous collector current of up to 1A, making it suitable for driving moderate loads.
  • Power Dissipation (Pd): It has a power dissipation rating of 1W, which indicates the amount of power it can handle before overheating.
  • DC Current Gain (hFE): The 2DB1132R-13-GIGA features a high DC current gain, ensuring effective current amplification in circuits.
  • Package / Case: The component is housed in a SOT-23 package, which is a small footprint surface-mount device, ideal for space-constrained applications.

Applications

The 2DB1132R-13-GIGA is versatile and can be used in a wide range of electronic circuits. It is particularly well-suited for use in linear amplification and switching applications. Common uses include but are not limited to audio amplifiers, signal processing, power management systems, and various types of consumer electronics where efficient and reliable current control is required.

Quality and Reliability

Diodes Incorporated is committed to delivering high-quality products. The 2DB1132R-13-GIGA is manufactured to meet stringent quality standards, ensuring high reliability and performance in even the most demanding applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.8258 $64.9548
14+ $8.8831 $124.3634
21+ $8.6059 $180.7239
28+ $8.3276 $233.1728
36+ $8.0504 $289.8144
49+ $7.2176 $353.6624
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 17,700 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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