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BC847BWQ-13-F

Part No BC847BWQ-13-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description GENERAL PURPOSE TRANSISTOR SOT32
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 200 mW
Frequency - Transition 300MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SOT-323
Base Product Number BC847
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1377192-BC847BWQ-13-F
Ultra Librarian 3D Model Ultra Librarian BC847BWQ-13-F CAD Model

Description

Product Overview: BC847BWQ-13-F from Diodes Incorporated

The BC847BWQ-13-F is a high-quality NPN bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated. This small signal transistor is a crucial component in a wide array of electronic applications, known for its reliability and efficiency. It is especially well-suited for use in general-purpose switching and amplification tasks, making it a versatile choice for designers and engineers.

With its SOT-323 package, the BC847BWQ-13-F is optimized for surface-mount technology (SMT), allowing for high-density PCB designs and automated assembly processes. This compact form factor is ideal for modern electronic devices where space is at a premium, without compromising on performance.

Key Features:

  • Transistor Type: The BC847BWQ-13-F is an NPN transistor, which is commonly used in electronic circuits for switching and amplification due to its fast switching speeds and high current gain.
  • Current Rating: It can handle a continuous collector current (Ic) of up to 100mA, making it suitable for a range of low to medium power applications.
  • Voltage Ratings: The transistor has a collector-emitter voltage (Vceo) of 45V and a collector-base voltage (Vcbo) of 50V, providing a good margin for various circuit designs.
  • Power Dissipation: It has a power dissipation of 250mW, which ensures that the device can handle a reasonable amount of power without overheating.
  • DC Current Gain (hFE): The device boasts a high DC current gain, ranging from 200 to 450 at 2mA of collector current, which is beneficial for amplification purposes.
  • Operating Temperature Range: The BC847BWQ-13-F operates effectively over a wide temperature range from -55°C to +150°C, offering stable performance under varying environmental conditions.
  • RoHS Compliant: This product complies with the RoHS directive, which means it is free from hazardous substances, making it environmentally friendly and suitable for use in all RoHS compliant devices.

Whether you're designing consumer electronics, industrial control systems, or communication devices, the BC847BWQ-13-F provides the performance and reliability you need. With its excellent switching characteristics and amplification capabilities, this transistor is a go-to component for a multitude of electronic circuit applications.

Diodes Incorporated's commitment to quality ensures that the BC847BWQ-13-F meets the highest standards, providing both durability and optimal electrical performance for your electronic projects.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,010+ $0.0288 $57.8880
4,295+ $0.0270 $115.9650
6,670+ $0.0260 $173.4200
9,570+ $0.0242 $231.5940
12,440+ $0.0233 $289.8520
15,545+ $0.0223 $346.6535
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,900 pieces
MOQ: 2010 pcs
Order Increment : 1 pcs
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