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BC856B-13-F

Part No BC856B-13-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 65V 0.1A SOT-23
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 25 Weeks
Features Bipolar (BJT) Transistor PNP 65 V 100 mA 200MHz 310 mW Surface Mount SOT-23-3
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting Surface Mount
Package TO-236-3, SC-59, SOT-23-3
Case / Package SOT-23-3
Family Name BC856
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number BC856B-13-FDI-ND, BC856B-13-FDICT, BC856B-13-FDI, BC856B-13-FDIDKR, BC856B-13-FDITR
Quantity per package 10000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 863644-BC856B-13-F
Ultra Librarian 3D Model Ultra Librarian BC856B-13-F CAD Model

Description

The BC856B-13-F from Diodes Incorporated is a high-quality PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This small-signal transistor is a robust and reliable component that is widely used in various electronic circuits for its excellent amplification and switching characteristics.

Key Features

  • Transistor Type: PNP - This transistor is a PNP type, meaning the majority carriers are holes, and it is designed for use in negative ground configurations.
  • Package: The BC856B-13-F comes in a compact SOT-23 package, which is ideal for space-constrained applications.
  • Collector-Emitter Voltage (Vceo): It can withstand a collector-emitter voltage of up to 65V, making it suitable for a range of electronic circuits.
  • Collector Current (Ic): The transistor can handle a continuous collector current of up to 100mA, providing sufficient current for many low-power applications.
  • DC Current Gain (hFE): It boasts a high DC current gain with a minimum hFE of 220 at 2mA, which means it provides a significant amplification factor for the input signal.
  • Power Dissipation: With a power dissipation of 250mW, the BC856B-13-F can dissipate a moderate amount of heat generated during operation without the need for additional heat sinks in most applications.
  • RoHS Compliant: This transistor is RoHS compliant, meaning it is manufactured without the use of hazardous materials, making it environmentally friendly and suitable for use in various international markets.

Applications

The BC856B-13-F PNP transistor is versatile and can be used in a wide array of electronic applications such as:

  • Signal amplification in audio devices
  • Driver stages in amplifiers
  • Switching operations in power management systems
  • Control circuits in embedded systems
  • Load management in portable electronics

With its excellent performance specifications and small footprint, the BC856B-13-F from Diodes Incorporated is an ideal choice for designers looking for a reliable and efficient PNP transistor for their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
575+ $0.0871 $50.0825
1,400+ $0.0715 $100.1000
2,170+ $0.0692 $150.1640
2,990+ $0.0670 $200.3300
3,860+ $0.0648 $250.1280
5,165+ $0.0581 $300.0865
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,000 pieces
MOQ: 575 pcs
Order Increment : 1 pcs
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