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BC857BFA-7B

Part No BC857BFA-7B
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 45V 0.1A X2-DFN0806-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 500mV @ 5mA, 100mA
Collector Cut-off Current(Max) 15nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 5V
Maximum Power Dissipation 435mW
Frequency - Transition 340MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Dimension 3-XFDFN
Win Source Part Number 100477-BC857BFA-7B
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BC857BFA-7B CAD Model

Description

Diodes Incorporated BC857BFA-7B - PNP Transistor

The BC857BFA-7B is a high-quality PNP bipolar junction transistor (BJT) from Diodes Incorporated, a leading manufacturer in the semiconductor market. This small-signal transistor is designed for general-purpose amplification and switching applications, making it a versatile component for a wide range of electronic circuits.

With its compact SOT-23 form factor, the BC857BFA-7B is ideal for space-constrained applications where efficiency and reliability are paramount. The device features a collector-emitter voltage (VCEO) of -45V and a collector current (IC) of -100mA, providing a good balance between voltage and current handling capabilities.

The BC857BFA-7B boasts a low collector-emitter saturation voltage, which ensures lower power dissipation and improved energy efficiency. Additionally, it offers a high current gain (hFE) band of 200-450 at -2mA, which is essential for applications requiring signal amplification. The high gain also allows for better performance in switching applications where fast turn-on and turn-off times are necessary.

This transistor is also characterized by its low noise figure, making it suitable for audio amplification and sensitive signal processing tasks. The device's robust construction ensures stability and longevity, even under varying environmental conditions and thermal stress.

Thanks to its PNP configuration, the BC857BFA-7B can be easily implemented in complementary or push-pull circuit designs, which are commonly used in power amplifiers and output stages of various electronic devices. Its compatibility with automatic insertion equipment makes it a convenient choice for mass production, saving time and reducing assembly costs.

In summary, the BC857BFA-7B from Diodes Incorporated is a reliable and efficient PNP transistor that offers excellent electrical characteristics for a multitude of electronic applications. Its compact size, high performance, and ease of integration make it a valuable component for designers and engineers looking to create compact, high-performing electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
270+ $0.1866 $50.3820
655+ $0.1532 $100.3460
1,015+ $0.1484 $150.6260
1,395+ $0.1436 $200.3220
1,805+ $0.1388 $250.5340
2,415+ $0.1244 $300.4260
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 540 pieces
MOQ: 270 pcs
Order Increment : 1 pcs
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