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BCM857BV-7

Part No BCM857BV-7
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 45V 0.1A SOT563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays
Mfr Diodes Incorporated
Series -
Package Tape & Reel
Product Status Active
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V
Power - Max 357mW
Frequency - Transition 175MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-563
Base Product Number BCM857
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1377095-BCM857BV-7
Ultra Librarian 3D Model Ultra Librarian BCM857BV-7 CAD Model

Description

Product Overview: BCM857BV-7 from Diodes Incorporated

The BCM857BV-7 is a high-performance, surface-mount, dual PNP transistor manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. This product is designed to offer a compact and efficient solution for various electronic applications.

Key Features

  • Transistor Configuration: The BCM857BV-7 features a monolithic dual PNP transistor configuration which allows for excellent matching in terms of gain and dynamic performance.
  • Package: Encased in a small SOT-363 package, the device offers a space-saving solution, which is critical in modern electronic devices where board space is at a premium.
  • Power Dissipation: With a total power dissipation of 250 mW, it can handle a moderate amount of power for its size, making it suitable for a variety of low-power applications.
  • Collector-Base Voltage (VCBO): It features a collector-base voltage of 80V, ensuring stability and reliability even under high-voltage conditions.
  • Collector-Emitter Voltage (VCEO): The transistor can withstand a collector-emitter voltage of 50V, providing ample headroom for many circuit designs.
  • Collector Current (IC): It supports a collector current of up to 100 mA, sufficient for signal amplification and switching applications.
  • DC Current Gain (hFE): The device boasts a high DC current gain, which is essential for amplification purposes in electronic circuits.

Applications

The BCM857BV-7 is ideal for use in a variety of applications that require dual PNP transistors. It is commonly used in:

  • Signal processing
  • Power management
  • Switching circuits
  • Amplification stages
  • Linear amplifiers
  • And other electronic circuits where dual PNP transistors are needed

With its robust design and electrical characteristics, the BCM857BV-7 is an excellent choice for designers looking for reliable and consistent performance in their electronic projects. Diodes Incorporated's commitment to quality ensures that this product meets the stringent requirements of the electronics industry, providing a dependable solution for both prototyping and mass production.

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Pricing & Ordering

Quantity Unit Price Ext. Price
365+ $0.1584 $57.8160
780+ $0.1482 $115.5960
1,215+ $0.1431 $173.8665
1,740+ $0.1328 $231.0720
2,265+ $0.1277 $289.2405
2,825+ $0.1227 $346.6275
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 365 pcs
Order Increment : 1 pcs
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