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BS170P

Part No BS170P
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 270MA TO92-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Input Capacitance 60pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 625mW (Ta)
Maximum Rds On at Id,Vgs 5 Ohm @ 200mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Dimension TO-226-3, TO-92-3 (TO-226AA)
Win Source Part Number 012117-BS170P
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BS170P CAD Model

Description

Product Overview: BS170P from Diodes Incorporated

The BS170P is a high-performance N-Channel MOSFET produced by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This robust electronic component is designed to deliver efficient power control and switching operations in a wide array of applications. The BS170P is a testament to Diodes Incorporated's commitment to providing innovative solutions that meet the evolving needs of modern electronic circuits.

Constructed with advanced manufacturing techniques, the BS170P MOSFET features a compact TO-92 package, making it suitable for through-hole mounting in various electronic devices. It is particularly favored for its low on-resistance and high-speed switching capabilities, which contribute to improved energy efficiency and reduced heat generation within circuits.

Key Specifications:

  • Drain-Source Voltage (VDS): The BS170P can withstand a maximum drain-source voltage of 60V, providing a wide operating range for different voltage levels in electronic systems.
  • Continuous Drain Current (ID): It supports a continuous drain current of up to 500mA, ensuring reliable performance for high-demand applications.
  • RDS(on): With a low on-state resistance, this MOSFET minimizes power loss and improves efficiency, which is crucial for power-sensitive designs.
  • Fast Switching Speed: The device is optimized for fast switching, reducing transition losses and enabling high-frequency operation.
  • Gate Threshold Voltage (VGS(th)): It features a gate threshold voltage that ensures low-voltage operation, making it suitable for battery-powered and portable devices.

Applications:

The BS170P is versatile and can be used in a variety of applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Motor Control Systems
  • Load/Relay Drivers
  • Switching Regulators

With its impressive electrical characteristics, the BS170P from Diodes Incorporated stands out as a reliable choice for designers looking to enhance the performance of their electronic products. Whether it's for consumer electronics, automotive systems, or industrial automation, the BS170P is engineered to provide efficient and dependable operation.

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4837 $58.0440
295+ $0.3970 $117.1150
455+ $0.3845 $174.9475
625+ $0.3721 $232.5625
805+ $0.3598 $289.6390
1,075+ $0.3225 $346.6875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,090 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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