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BS870-7-F

Part No BS870-7-F
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 0.25A SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Input Capacitance 50pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300mW (Ta)
Maximum Rds On at Id,Vgs 5 Ohm @ 200mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 012118-BS870-7-F
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BS870-7-F CAD Model

Description

The BS870-7-F, crafted by the renowned semiconductor manufacturer Diodes Incorporated, is an epitome of precision and reliability in the field of electronic components. This product is designed to cater to a wide range of applications, making it a versatile choice for professionals in the electronics industry.

Key Features

  • Device Type: This product is a PNP bipolar junction transistor (BJT), which is a type of transistor that uses holes as the majority charge carriers. It is designed for amplification and switching purposes, offering high current gain and low saturation voltage.
  • Configuration: The BS870-7-F comes in a single configuration, ensuring simplicity in design and ease of integration into various circuit layouts.
  • Package: Housed in a robust SOT-23 package, this transistor is not only compact but also offers excellent power dissipation characteristics for its size. The SOT-23 package is widely recognized for its reliability in surface-mount technology (SMT).
  • Collector-Emitter Voltage (Vceo): It can withstand a collector-emitter voltage of up to 45V, providing a good margin for a variety of electronic designs.
  • Collector Current (Ic): The device supports a continuous collector current of up to 100mA, making it suitable for moderate power handling applications.
  • Power Dissipation: With a power dissipation of 350mW, the BS870-7-F can sustain moderate thermal conditions without compromising performance.
  • RoHS Compliant: Adherence to the Restriction of Hazardous Substances (RoHS) directive makes this product environmentally friendly and suitable for use in a wide range of markets.

Applications

The BS870-7-F is adept for use in various applications, such as signal amplification, switching circuits, and power management solutions. Its robustness and reliability make it an ideal choice for consumer electronics, automotive systems, and industrial automation. Design engineers can leverage the transistor's features to enhance system performance and longevity.

Conclusion

Diodes Incorporated's BS870-7-F is a testament to the company's commitment to providing high-quality electronic components. Its combination of a PNP transistor configuration, SOT-23 packaging, and compliance with environmental standards make it a smart and sustainable choice for modern electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,475+ $0.0339 $50.0025
3,145+ $0.0318 $100.0110
4,890+ $0.0307 $150.1230
6,995+ $0.0286 $200.0570
9,095+ $0.0275 $250.1125
11,365+ $0.0264 $300.0360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 128,888 pieces
MOQ: 1475 pcs
Order Increment : 1 pcs
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