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BSN20-7

Part No BSN20-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 500MA SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.8nC @ 10V
Max Input Capacitance 40pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 600mW (Ta)
Maximum Rds On at Id,Vgs 1.8 Ohm @ 220mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024407-BSN20-7
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSN20-7 CAD Model

Description

The BSN20-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality discrete, analog, and mixed-signal semiconductors. This MOSFET is designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.

With its compact SOT-23 package, the BSN20-7 is a versatile component that is well-suited for space-constrained applications. It offers a drain-source voltage (VDS) of 50V, which allows it to handle moderate power levels in electronic circuits. The continuous drain current (ID) is rated at 500mA, making it an excellent choice for a wide range of applications, including power management, load switching, and conversion in portable and consumer electronics.

The BSN20-7 features a low on-state resistance (RDS(on)) of just 5Ω at a VGS of 10V, which ensures high efficiency and low heat generation during operation. This characteristic is particularly important for battery-powered devices, where energy efficiency is critical to maximize battery life.

Diodes Incorporated has designed the BSN20-7 with an advanced trench technology to achieve the best possible performance in terms of switching speed, gate charge, and low threshold voltage. This technology also contributes to the device's low leakage current and high threshold voltage stability under extended operating conditions, ensuring reliability and longevity of the product.

The BSN20-7 also includes built-in protection features such as a gate-source Zener diode, which protects the gate from over-voltage conditions, adding an extra layer of security to your designs. With its impressive specifications and Diodes Incorporated's commitment to quality, the BSN20-7 is an excellent choice for designers looking for a high-performance N-Channel MOSFET.

Whether you're designing power supplies, motor controls, or any other applications that require efficient power handling and switching, the BSN20-7 from Diodes Incorporated is a component that promises to deliver performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
315+ $0.1601 $50.4315
765+ $0.1314 $100.5210
1,180+ $0.1273 $150.2140
1,625+ $0.1232 $200.2000
2,100+ $0.1191 $250.1100
2,810+ $0.1068 $300.1080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,000 pieces
MOQ: 315 pcs
Order Increment : 1 pcs
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