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DDTB114EC-7-F

Part No DDTB114EC-7-F
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 200MW SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 56 @ 50mA, 5V
Max Vce (sat) 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 200MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package SOT-23-3
Win Source Part Number 100887-DDTB114EC-7-F
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DDTB114EC-7-F CAD Model

Description

Diodes Incorporated DDTB114EC-7-F PNP Pre-Biased Small Signal SOT-523 Transistor

The DDTB114EC-7-F from Diodes Incorporated is a PNP pre-biased small signal transistor encapsulated in a compact SOT-523 package. This semiconductor device is designed to offer a combination of a PNP transistor and a resistor in a single package, providing a simplified circuit design and a reduction in board space. It is an ideal component for use in power management, switching, and amplification applications across a wide range of electronic equipment.

Key Features:

  • Pre-Biased Configuration: Incorporates a built-in biasing resistor, which streamlines the design process and reduces component count.
  • Small Footprint: The SOT-523 package is ultra-small, making it suitable for high-density circuit designs where space is at a premium.
  • Power Dissipation: Capable of dissipating up to 150mW of power, ensuring reliable operation in various applications.
  • Collector-Emitter Voltage: Supports a maximum collector-emitter voltage (Vceo) of -50V, providing ample headroom for a range of electronic designs.
  • Collector Current: Offers a continuous collector current (Ic) of up to -100mA, suitable for small signal amplification.
  • Integrated Resistors: Features a 10kΩ base resistor and a 10kΩ resistor between the base and emitter, optimizing the transistor's switching performance.

Applications:

The DDTB114EC-7-F transistor is versatile and can be implemented in various applications, including:

  • Power management circuits
  • DC-DC converters
  • Signal processing
  • Motor control interfaces
  • Logic level shifters
  • Backlighting controls in portable devices

Quality and Reliability:

Diodes Incorporated ensures that the DDTB114EC-7-F meets high-quality standards, providing reliability and performance consistency. The device is RoHS compliant, adhering to environmental regulations and minimizing the use of hazardous substances in electronic components.

With its integrated design and robust electrical characteristics, the DDTB114EC-7-F is an excellent choice for designers looking to optimize their circuit designs with a reliable and efficient solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,145+ $0.0437 $50.0365
2,790+ $0.0359 $100.1610
4,315+ $0.0348 $150.1620
5,955+ $0.0336 $200.0880
7,695+ $0.0325 $250.0875
10,275+ $0.0292 $300.0300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,385 pieces
MOQ: 1145 pcs
Order Increment : 1 pcs
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