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DJT4030P-13

Part No DJT4030P-13
Manufacturer Diodes Incorporated
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 3A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 500mV @ 300mA, 3A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 1A, 1V
Maximum Power Dissipation 1.2W
Frequency - Transition 150MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 080476-DJT4030P-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DJT4030P-13 CAD Model

Description

Introducing the DJT4030P-13 PNP Transistor from Diodes Incorporated

The DJT4030P-13 is a high-performance PNP bipolar junction transistor (BJT) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, analog, and logic semiconductors. This transistor is a part of their broad range of BJTs, which are known for their reliability and efficiency in various electronic applications.

With its PNP configuration, the DJT4030P-13 is optimized for amplification and switching applications where a negative polarity is required. It boasts a collector-emitter voltage (VCEO) of -30V, which makes it suitable for medium power applications. The collector current rating of -3A ensures that it can handle significant current loads, making it a versatile choice for designers.

The device comes in a compact SOT-223 package, which is a surface-mount technology (SMT) component. This package is not only space-saving but also allows for better power dissipation and improved thermal management. The SOT-223 package is widely used in the industry, making the DJT4030P-13 compatible with standard PCB manufacturing processes and equipment.

Additionally, the DJT4030P-13 features a low collector-emitter saturation voltage (VCE(sat)), which translates into reduced power loss during operation. This characteristic is particularly beneficial in power-sensitive designs where efficiency is paramount. The low saturation voltage also contributes to the overall longevity of the device by minimizing thermal stress.

Diodes Incorporated has designed the DJT4030P-13 with a focus on quality and reliability. It is compliant with the RoHS directive, meaning it is free from hazardous substances such as lead, making it an environmentally friendly choice for electronic manufacturers. This compliance also ensures that the product can be used in markets worldwide that have strict environmental regulations.

In summary, the DJT4030P-13 from Diodes Incorporated is a robust PNP transistor that offers designers a balance of performance, power efficiency, and compact form factor. Whether it's for amplification, switching, or any other medium power application, this component is an excellent choice for a wide range of electronic circuits.

For more information about the DJT4030P-13, its specifications, and application notes, visit the Diodes Incorporated website or contact their customer support for detailed technical support.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.8918 $56.7540
65+ $1.5523 $100.8995
100+ $1.5038 $150.3800
140+ $1.4553 $203.7420
180+ $1.4068 $253.2240
240+ $1.2612 $302.6880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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