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DMC3016LSD-13

Part No DMC3016LSD-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 8.2A/6.2A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.2A, 6.2A
Maximum Rds On at Id,Vgs 16 mOhm @ 12A, 10V
Gate-Source Threshold Voltage 2.3V @ 250μA
Max Gate Charge 25.1nC @ 10V
Max Input Capacitance 1415pF @ 15V
Maximum Power Dissipation 1.2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 140081-DMC3016LSD-13
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian DMC3016LSD-13 CAD Model

Description

DMC3016LSD-13 MOSFET Overview

The DMC3016LSD-13 is a high-performance, N-Channel MOSFET developed by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This power MOSFET is designed to deliver efficient power management and conversion in a compact package, making it an ideal choice for a wide range of applications, including power supply, DC-DC converters, motor drives, and other electronic circuits requiring high-speed switching and low on-resistance.

Key Features

  • Low On-Resistance: The DMC3016LSD-13 offers exceptionally low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in power management applications.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is well-suited for applications that require quick response times and high-frequency operation.
  • Power Dissipation: It is capable of handling significant power levels with a maximum power dissipation of up to 2.5W, ensuring reliable performance under various conditions.
  • Gate Charge: The device features a low total gate charge (Q<sub>g), which minimizes the energy required to turn the MOSFET on and off, thereby enhancing the efficiency of the application.

Electrical Characteristics

  • Drain-Source Voltage (V<sub>DSS): 30V
  • Continuous Drain Current (I<sub>D): Up to 8.5A at a temperature of 25°C
  • Threshold Voltage (V<sub>GS(th)): A minimum of 1.0V, making it suitable for logic-level gate drive circuits.

Package and Reliability

The DMC3016LSD-13 comes in a space-saving SO-8 package, which is widely accepted in the industry for surface mount technology (SMT) applications. The compact form factor does not compromise its thermal and electrical performance, ensuring that it can be used in densely packed PCB layouts without overheating concerns.

Applications

  • Power Management Systems
  • DC-DC Converters
  • Battery Powered Devices
  • Motor Control Circuits
  • Load Switching
  • Computing and Networking Equipment

The DMC3016LSD-13 is RoHS compliant and characterized for operation from -55°C to +150°C, making it a reliable choice for both commercial and industrial environments. Its combination of efficiency, performance, and compact size makes the DMC3016LSD-13 a versatile component for designers looking to enhance their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.3483 $50.5035
350+ $0.2858 $100.0300
545+ $0.2769 $150.9105
750+ $0.2680 $201.0000
970+ $0.2590 $251.2300
1,295+ $0.2322 $300.6990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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