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DMC3025LSD-13

Part No DMC3025LSD-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 6.5A/4.2A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.5A, 4.2A
Maximum Rds On at Id,Vgs 20 mOhm @ 7.4A, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 9.8nC @ 10V
Max Input Capacitance 501pF @ 15V
Maximum Power Dissipation 1.2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 014359-DMC3025LSD-13
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMC3025LSD-13 CAD Model

Description

DMC3025LSD-13 MOSFET by Diodes Incorporated

The DMC3025LSD-13 is a high-performance, dual N-Channel enhancement mode field-effect transistor (MOSFET) designed by Diodes Incorporated. This semiconductor device is engineered to deliver efficient power control and switching in a compact package, making it a perfect choice for a wide range of electronic applications.

Key Features:

  • Low On-Resistance: The DMC3025LSD-13 is characterized by its low on-resistance, which enhances its efficiency by minimizing conduction losses. This feature is particularly beneficial in applications where high current handling and efficiency are critical.
  • High-Speed Switching: This MOSFET is designed for fast switching applications. Its rapid on-off capability ensures that it can handle high-speed operations, which is essential for modern power management circuits.
  • Dual N-Channel Configuration: The dual N-Channel setup allows for flexibility in design, enabling the use of a single component instead of multiple transistors. This integration can simplify circuit design and save on board space.
  • PowerDI®5060-8 Package: The DMC3025LSD-13 comes in a proprietary PowerDI®5060-8 package, which is known for its low thermal resistance and small footprint. This packaging technology helps in achieving better thermal performance and space-saving on PCBs.

Applications:

The DMC3025LSD-13 MOSFET is suitable for a variety of applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Motor Drives
  • Battery Management Systems
  • Load Switches
  • Point of Load (POL) Modules

With its robust design and high efficiency, the DMC3025LSD-13 is an excellent choice for designers looking to optimize power consumption and performance in their electronic systems. Diodes Incorporated's commitment to quality ensures that this MOSFET meets the rigorous demands of the industry, providing reliable and consistent performance across various applications.

For detailed specifications and application notes, engineers and designers are encouraged to consult the DMC3025LSD-13 datasheet available on the Diodes Incorporated website.

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Pricing & Ordering

Quantity Unit Price Ext. Price
220+ $0.2288 $50.3360
535+ $0.1878 $100.4730
825+ $0.1819 $150.0675
1,140+ $0.1760 $200.6400
1,470+ $0.1702 $250.1940
1,970+ $0.1526 $300.6220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 120,000 pieces
MOQ: 220 pcs
Order Increment : 1 pcs
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