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DMC3061SVTQ-7

Part No DMC3061SVTQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 25V~30V TSOT26 T&R  /  Mosfet Array N and P-Channel 30V 3.4A (Ta), 2.7A (Ta) 880mW Surface Mount TSOT-26
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta), 2.7A (Ta)
Rds On (Max) @ Id, Vgs 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 10V, 6.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 278pF @ 15V, 287pF @ 15V
Power - Max 880mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-26
Base Product Number DMC3061
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names 31-DMC3061SVTQ-7DKR,31-DMC3061SVTQ-7CT,31-DMC3061SVTQ-7TR
Standard Package 3,000
Win Source Part Number 1201363-DMC3061SVTQ-7
Ultra Librarian 3D Model Ultra Librarian DMC3061SVTQ-7 CAD Model

Description

DMC3061SVTQ-7 - MOSFET from Diodes Incorporated

The DMC3061SVTQ-7 is a high-performance, dual N-channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This component is particularly well-suited for a variety of applications, including power management tasks, load switching, and conversion in consumer electronics, computing devices, and portable equipment.

Featuring advanced trench MOSFET technology, the DMC3061SVTQ-7 provides excellent R<sub>DS(on) and low gate charge performance, making it an efficient choice for designs where power density and efficiency are critical. The device is housed in a compact TSOT-26 package, which is both space-saving and offers a low profile, ideal for slim and compact electronic assemblies.

Key specifications of the DMC3061SVTQ-7 include a continuous drain current (I<sub>D) rating of up to 6.5A, making it capable of handling moderate power levels. Its drain-source voltage (V<sub>DSS) is rated at 30V, which allows it to be used in a range of circuits without the risk of breakdown. The gate threshold voltage (V<sub>GS(th)) is specified as a minimum of 0.8V, ensuring that the MOSFET can be driven by low-voltage logic signals.

The MOSFET's low on-resistance minimizes conduction losses, while its fast switching speeds reduce switching losses, contributing to overall system efficiency. Additionally, the DMC3061SVTQ-7 features a body diode, which provides fast reverse recovery and contributes to its versatility in various circuit configurations.

Designed with reliability in mind, the DMC3061SVTQ-7 also includes built-in protections such as over-temperature and over-current safeguards to ensure stable operation under a wide range of conditions. The product is RoHS compliant, reflecting Diodes Incorporated's commitment to environmental sustainability.

Whether you're designing power supplies, motor controls, or looking for a reliable switch for your next project, the DMC3061SVTQ-7 MOSFET from Diodes Incorporated offers a balance of performance, efficiency, and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5239 $52.3900
235+ $0.4299 $101.0265
365+ $0.4165 $152.0225
500+ $0.4030 $201.5000
645+ $0.3896 $251.2920
860+ $0.3493 $300.3980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 276,739 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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