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DMG301NU-7

Part No DMG301NU-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V .26A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 260mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 0.36nC @ 4.5V
Max Input Capacitance 42pF @ 10V
Maximum Gate-Source Voltage 8V
Power Dissipation (Max) 320mW (Ta)
Maximum Rds On at Id,Vgs 4 Ohm @ 400mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1033668-DMG301NU-7
Family Name DMG301NU
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMG301NU-7 CAD Model

Description

Introducing the DMG301NU-7 MOSFET by Diodes Incorporated

The DMG301NU-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed with precision to cater to a wide range of power management applications. It is particularly suitable for load switch and battery protection circuits, providing efficient power control in portable and battery-operated devices.

Key Features

  • Low On-Resistance: The DMG301NU-7 features an extremely low on-resistance (R<sub>DS(on)), which translates to reduced power loss and enhanced efficiency in electronic circuits.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring minimal delay and high performance in power conversion and management systems.
  • Low Gate Charge: The low gate charge (Q<sub>G) characteristic of the DMG301NU-7 minimizes the power required to control the transistor, thus conserving energy and improving overall device efficiency.
  • Compact Package: Encased in a small SOT-23 package, the DMG301NU-7 is designed for space-constrained applications, offering high power density and simplifying PCB layout.

Applications

The DMG301NU-7 is versatile and can be employed in a variety of applications including:

  • Power Management for Portable Devices
  • Battery Protection Circuits
  • DC/DC Converters
  • Load Switches
  • Power Distribution Switches

Technical Specifications

Some of the technical specifications that make the DMG301NU-7 a preferred choice are:

  • Drain-Source Voltage (V<sub>DSS): 30V
  • Continuous Drain Current (I<sub>D): 4.2A
  • Power Dissipation (P<sub>D): 1.25W
  • Operating Temperature Range: -55°C to +150°C

Manufactured with Diodes Incorporated's advanced technology, the DMG301NU-7 stands out for its reliability and performance. It is RoHS compliant, reflecting the company's commitment to environmental sustainability. With its robust design and superior specifications, the DMG301NU-7 is an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,015+ $0.0493 $50.0395
2,470+ $0.0405 $100.0350
3,830+ $0.0392 $150.1360
5,265+ $0.0380 $200.0700
6,815+ $0.0367 $250.1105
9,120+ $0.0329 $300.0480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 360,000 pieces
MOQ: 1015 pcs
Order Increment : 1 pcs
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