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DMG302PU-7

Part No DMG302PU-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 25V .17A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 0.35nC @ 4.5V
Max Input Capacitance 27.2pF @ 10V
Maximum Gate-Source Voltage 8V
Power Dissipation (Max) 320mW (Ta)
Maximum Rds On at Id,Vgs 10 Ohm @ 200mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1033669-DMG302PU-7
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMG302PU-7 CAD Model

Description

Introducing the DMG302PU-7 Dual P-Channel Enhancement Mode MOSFET

Diodes Incorporated presents the DMG302PU-7, a cutting-edge power management solution designed for a variety of applications. This dual P-Channel enhancement mode MOSFET is a high-performance component that offers efficiency and reliability for your electronic designs.

Key Features

  • Low On-Resistance: The DMG302PU-7 boasts an impressively low on-resistance, which translates to reduced power loss and improved efficiency in your circuits.
  • High Power Dissipation: With a power dissipation of 1.25W, this MOSFET can handle significant power levels, making it suitable for demanding applications.
  • Miniature Package: Enclosed in a compact SOT-23 package, the DMG302PU-7 saves valuable board space while delivering robust performance.
  • Lead-Free and RoHS Compliant: Committed to environmental sustainability, the DMG302PU-7 is lead-free and meets RoHS standards, ensuring compliance with global environmental regulations.

Applications

The DMG302PU-7 is versatile and can be used in a wide range of applications, including:

  • Power Management Functions
  • Battery Powered Systems
  • Load/Power Switching
  • Portable Electronic Devices

Technical Specifications

Parameter Value Drain-Source Voltage (V<sub>DS) -20V Gate-Source Voltage (V<sub>GS) ±8V Continuous Drain Current (I<sub>D) -540mA On-Resistance (R<sub>DS(on)) 0.65Ω at V<sub>GS = -4.5V

With its advanced features and specifications, the DMG302PU-7 from Diodes Incorporated is an excellent choice for designers looking to enhance the performance and efficiency of their electronic products. Whether you're working on portable devices or power-sensitive applications, this dual P-Channel MOSFET will provide the reliability and functionality you need.

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Pricing & Ordering

Quantity Unit Price Ext. Price
220+ $0.2287 $50.3140
535+ $0.1877 $100.4195
830+ $0.1818 $150.8940
1,140+ $0.1760 $200.6400
1,470+ $0.1701 $250.0470
1,970+ $0.1525 $300.4250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 220 pcs
Order Increment : 1 pcs
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