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DMG4406LSS-13

Part No DMG4406LSS-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 30V 10.3A 8-SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 26.7nC @ 10V
Max Input Capacitance 1281pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 11 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 100292-DMG4406LSS-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMG4406LSS-13 CAD Model

Description

DMG4406LSS-13: A High-Performance MOSFET from Diodes Incorporated

The DMG4406LSS-13 is a state-of-the-art N-channel enhancement mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is part of Diodes Incorporated's extensive range of power management devices, which are engineered to provide efficient power control and conversion in a variety of electronic applications.

Constructed with advanced trench technology, the DMG4406LSS-13 offers superior performance in terms of on-resistance (R<sub>DS(on)) and gate charge (Q<sub>g), which translates to a highly efficient power conversion with reduced heat generation. The device is optimized for fast switching applications, making it an ideal choice for power supply circuits, DC-DC converters, motor drives, and other power-intensive applications where efficiency is paramount.

The DMG4406LSS-13 boasts a maximum continuous drain current (I<sub>D) of 50A, which allows it to handle high current loads with ease. The MOSFET operates at a maximum junction temperature of 150°C, ensuring reliable performance even under extreme operating conditions. With a threshold voltage (V<sub>th) as low as 1.0V, this MOSFET can be easily driven by low-voltage control circuits, making it versatile for various design requirements.

Encased in a robust and compact PowerDI5060-8 package, the DMG4406LSS-13 is designed for surface-mount technology (SMT), providing a space-saving solution for modern high-density circuit boards. The package is RoHS compliant, reflecting Diodes Incorporated's commitment to environmental responsibility by avoiding the use of hazardous substances in their products.

In summary, the DMG4406LSS-13 from Diodes Incorporated is an exemplary component for designers seeking a high-performance, efficient, and reliable MOSFET. Its advanced features and robust packaging make it suitable for a broad spectrum of power applications, ensuring that it continues to be a preferred choice among electronic professionals and enthusiasts alike.

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Pricing & Ordering

Quantity Unit Price Ext. Price
475+ $0.1219 $57.9025
1,155+ $0.1000 $115.5000
1,790+ $0.0969 $173.4510
2,465+ $0.0938 $231.2170
3,185+ $0.0907 $288.8795
4,265+ $0.0813 $346.7445
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,300 pieces
MOQ: 475 pcs
Order Increment : 1 pcs
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