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DMG9933USD-13

Part No DMG9933USD-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 4.6A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.6A
Maximum Rds On at Id,Vgs 75 mOhm @ 4.8A, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 6.5nC @ 4.5V
Max Input Capacitance 608.4pF @ 6V
Maximum Power Dissipation 1.15W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1033699-DMG9933USD-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMG9933USD-13 CAD Model

Description

    

The DMG9933USD-13 is a cutting-edge, dual N-channel enhancement mode field effect transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This MOSFET is designed to provide high-speed switching performance with low on-resistance, making it an ideal choice for power management applications.

    

Key Features

  
        
  • Low On-Resistance: The DMG9933USD-13 boasts an extremely low on-resistance, which translates to higher efficiency and less power loss during operation.
  •     
  • High-Speed Switching: Engineered for rapid switching, this FET is suitable for high-frequency applications, contributing to better performance in power conversion and management tasks.
  •     
  • Dual N-Channel: The dual N-Channel configuration allows for flexibility in design, enabling the implementation in a variety of circuit topologies.
  •     
  • PowerTrench® Technology: This product incorporates Diodes Incorporated's proprietary PowerTrench® technology, which optimizes the device for low gate charge and capacitance, enhancing overall device performance.
  •     
  • Surface Mount Package: The DMG9933USD-13 comes in a space-saving, surface-mount package that is suitable for compact and high-density circuit designs.
  •   
    

Applications

  

The DMG9933USD-13 is versatile and can be used in a wide array of applications, including:

  
        
  • Power supply conversion and regulation
  •     
  • DC-DC converters
  •     
  • Battery management systems
  •     
  • Load switches
  •     
  • Motor control circuits
  •   
    

Specifications

  

This MOSFET device operates with a continuous drain current of up to 4.3 A, and a pulsed drain current of 17 A, providing ample current for most power handling needs. The DMG9933USD-13 can handle a maximum drain-source voltage (Vds) of 30 V, with a gate-source voltage (Vgs) of ±20 V, offering a robust threshold for various applications.

    

Quality and Reliability

  

Diodes Incorporated is committed to delivering high-quality products. The DMG9933USD-13 is no exception and is built to meet the rigorous standards of the industry, ensuring reliability and long-term performance for your critical applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.7970 $52.7820
14+ $7.2181 $101.0534
22+ $6.9925 $153.8350
30+ $6.7670 $203.0100
39+ $6.5414 $255.1146
52+ $5.8647 $304.9644
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,800 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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