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DMN1003UCA6-7

Part No DMN1003UCA6-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2 N-CHANNEL X3-DSN3518-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 31 Weeks
Features Mosfet Array 2 N-Channel (Dual) - - 2.67W Surface Mount X3-DSN3518-6
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 6-SMD, No Lead
Case / Package X3-DSN3518-6
Family Name DMN1003
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMN1003UCA6-7DITR, DMN1003UCA6-7-ND, DMN1003UCA6-7DICT, DMN1003UCA6-7DIDKR
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 868921-DMN1003UCA6-7
Ultra Librarian 3D Model Ultra Librarian DMN1003UCA6-7 CAD Model

Description

Introducing the DMN1003UCA6-7 MOSFET from Diodes Incorporated

The DMN1003UCA6-7 is a high-performance, dual N-Channel enhancement mode field-effect transistor (MOSFET) designed by Diodes Incorporated, a leading manufacturer in the semiconductor market. This product is part of their extensive MOSFET portfolio and is tailored for power management applications across a wide range of industries.

With its compact form factor, the DMN1003UCA6-7 comes in a SOT-26 package, which is ideal for space-constrained applications. This MOSFET is designed to operate with a drain-source voltage (V<sub>DS) of 30V, and it can support a continuous drain current (I<sub>D) of up to 0.63A at room temperature, making it suitable for moderate power handling requirements.

The device features low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing power losses during operation. This characteristic is particularly beneficial in applications where energy conservation is crucial. The DMN1003UCA6-7's low threshold voltage ensures that it can be driven by low-voltage logic signals, which simplifies the interface with microcontrollers and other logic devices.

One of the key advantages of the DMN1003UCA6-7 is its dual MOSFET configuration. This feature allows designers to use a single component for applications that require two N-Channel MOSFETs, thereby reducing the overall parts count and saving valuable board space. The device's common drain design also simplifies the PCB layout process and enhances thermal performance due to the shared drain connection.

The DMN1003UCA6-7 is designed with high reliability in mind. It is characterized for operation over a wide temperature range, ensuring stable performance in environments with varying thermal conditions. Additionally, it is RoHS compliant, reflecting Diodes Incorporated's commitment to environmental sustainability.

Applications for the DMN1003UCA6-7 are diverse and include load/switching circuits, power management in portable devices, DC-DC converters, and other electronic systems where efficient power control is necessary. Its combination of efficiency, compact size, and dual-channel configuration make it a versatile choice for designers looking to optimize their power management solutions.

Overall, the DMN1003UCA6-7 from Diodes Incorporated represents a reliable, efficient, and space-saving solution for a variety of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4763 $59.5375
300+ $0.3909 $117.2700
460+ $0.3788 $174.2480
635+ $0.3665 $232.7275
820+ $0.3543 $290.5260
1,095+ $0.3176 $347.7720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 90,618 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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