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DMN1029UFDB-7

Part No DMN1029UFDB-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 12V 5.6A 6UDFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 31 Weeks
Features Mosfet Array 2 N-Channel (Dual) 12V 5.6A 1.4W Surface Mount U-DFN2020-6 (Type B)
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 6-UDFN Exposed Pad
Case / Package U-DFN2020-6 (Type B)
Family Name DMN1029
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMN1029UFDB-7DIDKR, DMN1029UFDB-7DITR, DMN1029UFDB-7DICT
Quantity per package 3000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 917143-DMN1029UFDB-7
Ultra Librarian 3D Model Ultra Librarian DMN1029UFDB-7 CAD Model

Description

Overview of DMN1029UFDB-7 MOSFET

The DMN1029UFDB-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This MOSFET is particularly well-suited for load switch and power management applications within a wide range of electronic devices.

Key Features

  • Low On-Resistance: The DMN1029UFDB-7 boasts an extremely low on-resistance (R<sub>DS(on)), which results in minimal power loss and enhanced efficiency when the transistor is in the "on" state.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-speed circuitry, contributing to better performance in applications that require rapid state changes.
  • Low Threshold Voltage: The low gate threshold voltage allows for the device to be driven at lower voltages, making it compatible with logic-level circuits and reducing the need for level-shifting components.
  • Surface-Mount Package: Housed in a compact DFN2020-6 (Type B) surface-mount package, the DMN1029UFDB-7 is designed for space-constrained applications, providing powerful performance in a small footprint.

Applications

The DMN1029UFDB-7 is versatile and can be used in a variety of applications, including:

  • Power management for portable devices
  • DC/DC converters
  • Battery management systems
  • Load switches
  • Motor control circuits

Reliability and Compliance

Diodes Incorporated ensures that the DMN1029UFDB-7 meets stringent quality and reliability standards. The device is RoHS compliant, adhering to environmental regulations that restrict the use of hazardous substances in electronic equipment. Additionally, it is characterized for operation from -55°C to +150°C, providing reliable performance across a broad range of operating temperatures.

Conclusion

The DMN1029UFDB-7 from Diodes Incorporated is an efficient, reliable, and versatile N-Channel MOSFET suitable for a wide range of electronic applications. Its low on-resistance, high-speed switching, and compact form factor make it an excellent choice for designers looking to optimize power management and load switching in their circuits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
235+ $0.2133 $50.1255
575+ $0.1751 $100.6825
885+ $0.1696 $150.0960
1,220+ $0.1641 $200.2020
1,580+ $0.1587 $250.7460
2,110+ $0.1422 $300.0420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,504 pieces
MOQ: 235 pcs
Order Increment : 1 pcs
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