The DMN10H170SK3-13-79 is a high-performance, N-Channel MOSFET brought to you by Diodes Incorporated, a leading manufacturer in the semiconductor market. This MOSFET is designed to deliver efficient power conversion and control within a compact package, making it an ideal choice for a wide range of applications.

Key Features

• High Drain-Source Breakdown Voltage: With a V<sub>DS of 100V, this MOSFET can handle high voltage operations, making it suitable for various power applications.
• Low On-Resistance: The low R<sub>DS(on) minimizes on-state losses, which enhances overall efficiency and reduces thermal stress on the device.
• High-Speed Switching: The DMN10H170SK3-13-79 is designed for fast switching applications, providing efficient performance with reduced switching losses.
• PowerDI3333-8 Package: The compact surface-mount package allows for a smaller PCB footprint and is compatible with automated assembly processes.
• RoHS Compliant: This product complies with RoHS standards, ensuring it meets global environmental and safety requirements.

Applications

The versatility of the DMN10H170SK3-13-79 MOSFET makes it suitable for a diverse array of applications. These include:

• Power Management Solutions
• DC-DC Converters
• Motor Drives
• Battery Management Systems
• Load Switches
• Telecom and Server Power Supplies

Quality and Reliability

Diodes Incorporated is committed to providing products that meet the highest standards of quality and reliability. The DMN10H170SK3-13-79 MOSFET is manufactured using industry-leading techniques and is subjected to rigorous testing to ensure it meets the stringent requirements for commercial and industrial applications.

Technical Specifications

For detailed specifications and application support, please refer to the official datasheet provided by Diodes Incorporated for the DMN10H170SK3-13-79 MOSFET.