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DMN10H170SVTQ-7

Part No DMN10H170SVTQ-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 2.6A TSOT26 / N-Channel 100 V 2.6A (Ta) 1.2W (Ta) Surface Mount TSOT-26
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Diodes Incorporated
Packaging Reel - TR
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 2.6A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1167 pF @ 25 V
Power Dissipation (Max) 1.2W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Surface Mount
Supplier Device Package TSOT-26
Case / Package SOT-23-6 Thin, TSOT-23-6
Base Product Number DMN10
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMN10H170SVTQ-7DIDKR,DMN10H170SVTQ-7DICT,DMN10H170SVTQ-7DITR,DMN10H170SVTQ-7-ND
Standard Package 3,000
Win Source Part Number 1324351-DMN10H170SVTQ-7
Ultra Librarian 3D Model Ultra Librarian DMN10H170SVTQ-7 CAD Model

Description

DMN10H170SVTQ-7 - N-Channel Enhancement Mode MOSFET

The DMN10H170SVTQ-7 is a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) designed and manufactured by Diodes Incorporated. This power MOSFET is a versatile component suitable for a wide range of applications, including power management, load switching, and DC-DC conversion in consumer, industrial, and automotive electronics.

Key Features

  • Low On-Resistance: The device features a low on-resistance (R<sub>DS(on)), which minimizes conduction losses and improves efficiency in applications where it is used as a switch.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D) rating, the DMN10H170SVTQ-7 can handle significant current loads, making it suitable for high-power applications.
  • High-Speed Switching: The MOSFET is designed for fast switching speeds, which is essential for reducing switching losses and improving performance in high-frequency circuits.
  • Low Threshold Voltage: A low gate threshold voltage (V<sub>GS(th)) allows for the MOSFET to be easily driven by logic-level voltages, simplifying the interface with microcontrollers and other control circuitry.

Product Specifications

The DMN10H170SVTQ-7 MOSFET operates over a broad voltage range and is characterized by its robustness and reliability. It is housed in a compact SOT-23 package, which is ideal for space-constrained applications. The device can withstand a maximum drain-source voltage (V<sub>DSS) of 100V, and it has a maximum continuous drain current (I<sub>D) of 170mA at 25°C. Additionally, it has a power dissipation (P<sub>D) of 1.3W, ensuring it can handle significant power levels without overheating.

Applications

The DMN10H170SVTQ-7 MOSFET's combination of low on-resistance, high-speed switching, and logic-level drive capability make it an excellent choice for a variety of applications, such as:

  • Power supply circuits
  • DC-DC converters
  • Battery management systems
  • Motor control modules
  • LED lighting systems
  • Load switching applications

With its robust performance and compact form factor, the DMN10H170SVTQ-7 from Diodes Incorporated represents a reliable and efficient solution for designers looking to optimize their power management and switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4769 $50.0745
260+ $0.3914 $101.7640
400+ $0.3791 $151.6400
550+ $0.3669 $201.7950
705+ $0.3547 $250.0635
945+ $0.3180 $300.5100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,370 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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