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DMN10H220L-7

Part No DMN10H220L-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 1.6A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 8.3nC @ 10V
Max Input Capacitance 401pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 220 mOhm @ 1.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1033714-DMN10H220L-7
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN10H220L-7 CAD Model

Description

Product Overview: DMN10H220L-7

The DMN10H220L-7 is a high-performance, dual N-Channel enhancement mode field effect transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This advanced MOSFET is engineered to meet the demanding requirements of power management applications across various electronic devices.

Key Features

  • Low On-Resistance: The DMN10H220L-7 boasts a low on-resistance (R<sub>DS(on)), which translates to high efficiency and minimal power loss during operation. This feature is crucial for applications that require energy-saving capabilities.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET enables quick transitions between on and off states, thereby improving the performance of power switching circuits.
  • Low Threshold Voltage: With a low threshold voltage, this component can be easily driven by low-voltage control signals, making it suitable for low-power applications and compatible with modern microcontrollers.
  • Surface-Mount Package: The DMN10H220L-7 comes in a compact SOT-23 package, which is ideal for space-constrained applications. Its surface-mount design allows for efficient assembly and integration into various circuit boards.

Applications

The versatility of the DMN10H220L-7 allows it to be used in a wide range of applications, including but not limited to:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Management Systems
  • Motor Control Modules
  • Load/Power Switching

Specifications

Some of the key specifications of the DMN10H220L-7 include:

  • Drain-Source Voltage (V<sub>DS): 20V
  • Continuous Drain Current (I<sub>D): 3.7A
  • Power Dissipation (P<sub>D): 1.25W
  • Operating Temperature Range: -55°C to +150°C

Quality and Reliability

Diodes Incorporated ensures that the DMN10H220L-7 meets stringent quality and reliability standards, providing a robust and durable component suitable for industrial and commercial use. The product is RoHS compliant and lead-free, reflecting the company's commitment to environmental sustainability.

With its combination of efficiency, performance, and compact form factor, the DMN10H220L-7 is an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5189 $51.8900
210+ $0.4860 $102.0600
320+ $0.4696 $150.2720
460+ $0.4368 $200.9280
595+ $0.4203 $250.0785
745+ $0.4039 $300.9055
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 280,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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