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DMN2016LFG-7

Part No DMN2016LFG-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 5.2A 8UDFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.2A
Maximum Rds On at Id,Vgs 18 mOhm @ 6A, 4.5V
Gate-Source Threshold Voltage 1.1V @ 250μA
Max Gate Charge 16nC @ 4.5V
Max Input Capacitance 1472pF @ 10V
Maximum Power Dissipation 770mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package U-DFN3030-8
Win Source Part Number 014414-DMN2016LFG-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN2016LFG-7 CAD Model

Description

DMN2016LFG-7 MOSFET by Diodes Incorporated

The DMN2016LFG-7 from Diodes Incorporated is a high-performance, N-channel enhancement mode field-effect transistor (MOSFET) designed for a wide range of applications. This component is part of Diodes Incorporated's extensive MOSFET product line and is tailored for power management tasks where efficiency and reliability are of paramount importance.

Enclosed in a compact SOT-23 package, the DMN2016LFG-7 is a versatile component that can be easily integrated into various circuit designs. It boasts a low on-resistance (RDS(on)) of just 45 mΩ at VGS = 4.5V, which translates to reduced conduction losses and improved overall efficiency in applications. This feature is particularly beneficial in power-sensitive designs such as portable electronics, where battery life is critical.

The DMN2016LFG-7 can handle a continuous drain current (ID) of up to 3.7A, making it suitable for handling moderate power loads. Its maximum drain-source voltage (VDSS) is rated at 20V, which provides a sufficient margin for most low to medium voltage applications. Additionally, the device has a low gate threshold voltage (VGS(th)), which ensures it can be easily turned on with logic-level voltages, simplifying the drive circuitry.

With fast switching characteristics, the DMN2016LFG-7 is also ideal for high-speed switching applications. This makes it a good choice for DC-DC converters, motor control circuits, and power management systems in computing and telecommunications equipment. Moreover, its low input capacitance (Ciss) contributes to the fast switching speeds and reduced drive power requirements.

Diodes Incorporated has designed the DMN2016LFG-7 with reliability in mind. It features robust thermal performance and is rated for operation over a wide temperature range, ensuring stability and long-term reliability even in challenging environmental conditions. Whether for power distribution, load switching, or as a component in more complex power management systems, the DMN2016LFG-7 is an excellent choice for designers seeking performance and efficiency.

To conclude, the DMN2016LFG-7 MOSFET stands out with its low on-resistance, high current capability, and fast switching performance, making it a highly efficient solution for a broad spectrum of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4225 $56.9000
90+ $1.1672 $105.0480
135+ $1.1308 $152.6580
185+ $1.0943 $202.4455
240+ $1.0578 $253.8720
320+ $0.9484 $303.4880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,689 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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