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DMN2022UFDF-7

Part No DMN2022UFDF-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 7.9A 6UDFN / N-Channel 20 V 7.9A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type F)
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 7.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 22mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 907 pF @ 10 V
Power Dissipation (Max) 660mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package U-DFN2020-6 (Type F)
Package / Case 6-UDFN Exposed Pad
Base Product Number DMN2022
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names DMN2022UFDF-7DICT,DMN2022UFDF-7DITR,DMN2022UFDF-7DIDKR
Standard Package 3,000
Win Source Part Number 998219-DMN2022UFDF-7
Ultra Librarian 3D Model Ultra Librarian DMN2022UFDF-7 CAD Model

Description

Introducing the DMN2022UFDF-7 MOSFET from Diodes Incorporated

Diodes Incorporated, a leading manufacturer in the semiconductor market, presents the DMN2022UFDF-7, a high-performance, ultra-efficient MOSFET designed for a variety of applications. This compact yet powerful component is part of Diodes Incorporated's extensive MOSFET product line, offering designers a reliable and cost-effective solution for their power management needs.

Key Features

  • Device Type: MOSFET
  • Configuration: Single N-Channel
  • Package: DFN2020-6 (Type D)
  • Drain-Source Voltage (VDS): 20V
  • Continuous Drain Current (ID): 6.5A
  • RDS(on): Very low on-resistance for increased efficiency
  • Max Power Dissipation: 1.25W

The DMN2022UFDF-7 boasts an advanced MOSFET technology that allows for low on-resistance and minimal gate charge, leading to reduced conduction and switching losses. This feature makes it an ideal choice for high-efficiency power management tasks. Its compact DFN2020-6 (Type D) package is designed for space-constrained applications while providing excellent thermal performance.

Applications

Thanks to its versatile characteristics, the DMN2022UFDF-7 can be used in various applications, including:

  • Power supply circuits
  • DC-DC converters
  • Load switches
  • Battery management systems
  • Motor control circuits

With a drain-source voltage of 20V and a continuous drain current of 6.5A, this MOSFET can handle significant power levels, making it suitable for both consumer and industrial electronics. The device's low threshold voltage ensures it can be driven by low-voltage logic signals, simplifying the design of control interfaces.

Quality and Reliability

Diodes Incorporated is committed to delivering products with the highest standards of quality and reliability. The DMN2022UFDF-7 is no exception, undergoing rigorous testing to ensure it meets the stringent requirements for a range of industrial and commercial applications. With its robust construction and proven performance, this MOSFET is a reliable choice for designers looking to enhance their system's power efficiency.

For more information about the DMN2022UFDF-7, including datasheets and purchasing options, please visit the Diodes Incorporated website or contact their sales representatives.

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Pricing & Ordering

Quantity Unit Price Ext. Price
335+ $0.1511 $50.6185
810+ $0.1240 $100.4400
1,250+ $0.1202 $150.2500
1,720+ $0.1163 $200.0360
2,225+ $0.1124 $250.0900
2,980+ $0.1008 $300.3840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 335 pcs
Order Increment : 1 pcs
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