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DMN21D2UFB-7B

Part No DMN21D2UFB-7B
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 0.76A 3DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 760mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 0.93nC @ 10V
Max Input Capacitance 27.6pF @ 16V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 380mW (Ta)
Maximum Rds On at Id,Vgs 990 mOhm @ 100mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 3-DFN1006 (1.0x0.6)
Dimension 3-UFDFN
Win Source Part Number 1033731-DMN21D2UFB-7B
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN21D2UFB-7B CAD Model

Description

The DMN21D2UFB-7B is a high-performance, dual N-channel enhancement mode field effect transistor (FET) from Diodes Incorporated, designed for use in a wide range of electronic applications. This compact and efficient MOSFET is part of Diodes Incorporated's extensive portfolio of semiconductor products, known for their reliability and innovation.

Key Features

  • Low On-Resistance: The DMN21D2UFB-7B features low on-resistance, which ensures minimal power loss and heat generation during operation, making it suitable for power-sensitive applications.
  • High-Speed Switching: This MOSFET is optimized for high-speed switching applications, offering quick response times and improved overall performance in circuits that require frequent on-off states.
  • Dual N-Channel: The dual N-channel configuration allows for the integration of two independent MOSFETs in a single package, saving space and reducing component count in circuit designs.
  • Ultra-Small DFN2020 Package: The DMN21D2UFB-7B comes in an ultra-small DFN2020 package, which is ideal for space-constrained applications, providing excellent thermal performance and board-level reliability.
  • Low Threshold Voltage: With a low threshold voltage, this MOSFET can be easily driven at lower gate voltages, making it compatible with a broader range of drive circuits and logic levels.

Applications

The DMN21D2UFB-7B is versatile and can be used in various applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Battery Management Systems
  • Load/Power Switching
  • Motor Control Systems
  • Computing and Storage Platforms

Quality and Reliability

Diodes Incorporated is committed to providing high-quality products that meet the stringent requirements of the electronics industry. The DMN21D2UFB-7B is no exception, with rigorous testing and quality control measures in place to ensure reliability and performance across a broad range of conditions.

Environmental Compliance

The DMN21D2UFB-7B is compliant with RoHS and Green standards, reflecting Diodes Incorporated's dedication to environmental responsibility and the production of eco-friendly components.

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Pricing & Ordering

Quantity Unit Price Ext. Price
610+ $0.0821 $50.0810
1,490+ $0.0673 $100.2770
2,305+ $0.0652 $150.2860
3,170+ $0.0631 $200.0270
4,100+ $0.0610 $250.1000
5,485+ $0.0547 $300.0295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,792 pieces
MOQ: 610 pcs
Order Increment : 1 pcs
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