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DMN2400UFB4-7B

Part No DMN2400UFB4-7B
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 550mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.5 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 36 pF @ 16 V
Power Dissipation (Max) 470mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package X2-DFN1006-3
Package / Case 3-XFDFN
Base Product Number DMN2400
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 585448-DMN2400UFB4-7B
Ultra Librarian 3D Model Ultra Librarian DMN2400UFB4-7B CAD Model

Description

DMN2400UFB4-7B - A High-Performance MOSFET from Diodes Incorporated

The DMN2400UFB4-7B is a state-of-the-art N-Channel enhancement mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading company in the semiconductor market. This compact and efficient MOSFET is encapsulated in a small form factor DFN1006B-3 package, making it an ideal choice for space-constrained applications.

Key Features

  • Low On-Resistance: The DMN2400UFB4-7B boasts an exceptionally low on-resistance of typically 24 mOhms at V<sub>GS = 4.5V. This characteristic ensures minimal power loss and improved efficiency in electronic circuits.
  • High Continuous Drain Current: With a high continuous drain current of 2A, this MOSFET can handle significant current loads, making it suitable for high-performance applications.
  • Gate-Source Voltage: It operates at a maximum gate-source voltage of ±20V, providing a wide range for various circuit designs.
  • Low Threshold Voltage: The device features a low threshold voltage, which allows it to be used in logic-level applications, enabling direct interfacing with microcontrollers and other logic devices.

Applications

The DMN2400UFB4-7B is versatile and can be utilized in a wide array of applications. Some of the common uses include:

  • Power Management Circuits
  • Load/Power Switching
  • Battery Protection Circuits
  • DC-DC Converters
  • Portable Devices
  • High-Speed Switching Circuits

Quality and Reliability

Diodes Incorporated is committed to delivering high-quality products. The DMN2400UFB4-7B MOSFET is produced with rigorous quality control standards, ensuring reliability and performance consistency. It is also RoHS compliant, making it an environmentally friendly choice for manufacturers concerned about sustainability.

Conclusion

In conclusion, the DMN2400UFB4-7B from Diodes Incorporated represents a blend of efficiency, compactness, and high performance. Whether for power management or high-speed switching, this MOSFET is an excellent choice for designers looking to optimize their electronic designs while maintaining a small footprint.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,920+ $0.0261 $50.1120
4,675+ $0.0214 $100.0450
7,250+ $0.0207 $150.0750
9,955+ $0.0201 $200.0955
12,890+ $0.0194 $250.0660
17,245+ $0.0174 $300.0630
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 81,220 pieces
MOQ: 1920 pcs
Order Increment : 1 pcs
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