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DMN2400UV-7

Part No DMN2400UV-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 1.33A SOT563
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.33A
Maximum Rds On at Id,Vgs 480 mOhm @ 200mA, 5V
Gate-Source Threshold Voltage 900mV @ 250μA
Max Gate Charge 0.5nC @ 4.5V
Max Input Capacitance 36pF @ 16V
Maximum Power Dissipation 530mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-563
Win Source Part Number 014424-DMN2400UV-7
Family Name DMN2400UV
Introduction Date January 08, 2010
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2025
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN2400UV-7 CAD Model

Description

Product Overview: DMN2400UV-7 – A High-Performance MOSFET from Diodes Incorporated

The DMN2400UV-7 is a cutting-edge N-Channel enhancement mode Field Effect Transistor (MOSFET) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed to offer efficient power management and signal processing in a wide range of electronic applications.

Key Features

  • Low On-Resistance: The DMN2400UV-7 boasts an extremely low on-resistance (R<sub>DS(on)), which translates to reduced power losses and improved efficiency in operation.
  • High-Speed Switching: Engineered for fast switching, this MOSFET is ideal for high-speed circuitry, enhancing overall performance and responsiveness.
  • Low Threshold Voltage: The low threshold voltage ensures that the device can be driven at lower gate voltages, making it compatible with low-voltage logic signals and helping to conserve power.
  • Small Footprint: Housed in a compact SOT-23 package, the DMN2400UV-7 is perfect for applications where space is at a premium, without compromising on power and performance.
  • RoHS Compliant: Complying with RoHS standards, this product is manufactured with the environment in mind, minimizing the use of hazardous substances.

Applications

The DMN2400UV-7 is versatile and can be used in various applications, including:

  • Power Management Circuits
  • DC-DC Converters
  • Battery Management Systems
  • Load Switches
  • Motor Control Modules
  • Portable Electronic Devices

Technical Specifications

The DMN2400UV-7 operates with a continuous drain current of 760mA and a pulsed drain current of 2.5A. It can handle a maximum drain-source voltage (V<sub>DS) of 240V, which allows for high-voltage operations. The gate threshold voltage (V<sub>GS(th)) is specified at 1.2V, and the device features a total gate charge (Q<sub>g) of just 0.83nC, which is indicative of its swift response times.

For those looking for a reliable and efficient MOSFET solution, the DMN2400UV-7 from Diodes Incorporated is an excellent choice that combines performance with compactness and environmental consciousness.

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Pricing & Ordering

Quantity Unit Price Ext. Price
425+ $0.1180 $50.1500
905+ $0.1105 $100.0025
1,405+ $0.1068 $150.0540
2,015+ $0.0993 $200.0895
2,620+ $0.0956 $250.4720
3,270+ $0.0918 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 48,000 pieces
MOQ: 425 pcs
Order Increment : 1 pcs
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