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NP75P04YLG-E1-AY

Part No NP75P04YLG-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 75A 8HSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Renesas Electronics America
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 140nC @ 10V
Max Input Capacitance 4800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta), 138W (Tc)
Maximum Rds On at Id,Vgs 9.7 mOhm @ 37.5A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HSON
Dimension 8-SMD, Flat Lead Exposed Pad
Win Source Part Number 125991-NP75P04YLG-E1-AY
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NP75P04YLG-E1-AY CAD Model

Description

The Renesas NP75P04YLG-E1-AY is a medium-popularity electronic component that is suitable for various applications.

  • Supply and Demand: balanced
  • Manufacturer: Renesas Electronics America
  • Win Source Part Number: 125991
  • Technology: MOSFET
  • Polarity: P-Channel
  • Power Dissipation: 1W (Ta), 138W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Status: obsolete (EOL)
  • Temperature Range: 175°C (TJ)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 9.7 mOhm @ 37.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2702 $52.2146
54+ $1.8627 $100.5858
84+ $1.8045 $151.5780
115+ $1.7463 $200.8245
149+ $1.6881 $251.5269
199+ $1.5135 $301.1865
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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