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DMN3023L-13

Part No DMN3023L-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.2A SOT23 / N-Channel 30 V 6.2A (Ta) 900mW (Ta) Surface Mount SOT-23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Diodes Incorporated
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 873 pF @ 15 V
Power Dissipation (Max) 900mW (Ta)
Temperature Range - Operating -55°C ~ 155°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DMN3023
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names DMN3023L-13DI
Standard Package 10,000
Win Source Part Number 1055766-DMN3023L-13
Ultra Librarian 3D Model Ultra Librarian DMN3023L-13 CAD Model

Description

DMN3023L-13 N-Channel Enhancement Mode MOSFET

The DMN3023L-13 is a high-performance N-Channel enhancement mode Field Effect Transistor (FET) from Diodes Incorporated, designed for a wide range of applications that require efficient power management and high switching speeds. This MOSFET is a part of Diodes Incorporated's extensive line of semiconductor products, known for their reliability and innovation.

Key Features

  • Low On-Resistance: The DMN3023L-13 boasts an ultra-low on-resistance (RDS(on)) of typically just 24 mΩ at VGS = 10V, which ensures minimal power loss and heat generation during operation.
  • High Continuous Drain Current: With a continuous drain current (ID) of 6.5A, this MOSFET can handle significant power, making it suitable for high-current applications.
  • High-Speed Switching: The device is designed for fast switching speeds, which is essential for applications such as power supplies, DC-DC converters, and motor drives.
  • Low Threshold Voltage: The low threshold voltage (VGS(th)) allows the MOSFET to be easily driven at lower gate voltages, enhancing its versatility in various circuit designs.
  • Advanced Packaging: Housed in a RoHS-compliant, SOT-23 package, the DMN3023L-13 offers a compact footprint and is compatible with automated assembly processes.
  • High-Temperature Performance: Capable of operating over a wide temperature range, this MOSFET is reliable in environments with temperatures ranging from -55°C to +150°C.

Applications

The DMN3023L-13 is ideal for a variety of electronic applications, including:

  • Power Management
  • Load Switches
  • DC-DC Converters
  • Battery Management Systems
  • Motor Control Circuits

With its combination of low on-resistance, high current capacity, and fast switching speeds, the DMN3023L-13 from Diodes Incorporated is a versatile component that enhances the efficiency and performance of electronic systems. Whether you're designing power supplies, motor controls, or battery management systems, this MOSFET is engineered to meet the rigorous demands of modern electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
410+ $0.1223 $50.1430
1,000+ $0.1003 $100.3000
1,545+ $0.0972 $150.1740
2,130+ $0.0941 $200.4330
2,755+ $0.0909 $250.4295
3,685+ $0.0815 $300.3275
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,410 pieces
MOQ: 410 pcs
Order Increment : 1 pcs
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