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DMN3024SFG-7

Part No DMN3024SFG-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7.5A PWRDI3333-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 10.5nC @ 10V
Max Input Capacitance 478.9pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 900mW (Ta)
Maximum Rds On at Id,Vgs 23 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerDI3333-8
Dimension 8-PowerWDFN
Win Source Part Number 014431-DMN3024SFG-7
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN3024SFG-7 CAD Model

Description

DMN3024SFG-7 MOSFET by Diodes Incorporated

The DMN3024SFG-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) designed and manufactured by Diodes Incorporated. This power MOSFET is a testament to the company's commitment to providing energy-efficient, reliable, and compact solutions for a wide range of electronic applications.

With its advanced MOSFET technology, the DMN3024SFG-7 is engineered to deliver superior switching performance and high power efficiency. It features a low on-resistance (R<sub>DS(on)) of just 24 mΩ at V<sub>GS = 10V, which minimizes conduction losses and enhances overall system efficiency. This characteristic makes the DMN3024SFG-7 an excellent choice for power management tasks in various electronic devices.

The device is housed in a small form factor PowerDI®3333-8 package, which not only saves valuable board space but also ensures robust thermal performance. The compact design does not compromise on its power handling capabilities, as the DMN3024SFG-7 can support a continuous drain current (I<sub>D) of up to 10A, making it suitable for high current applications.

This MOSFET is capable of operating within a wide temperature range of -55°C to +150°C, ensuring reliability and stability in extreme conditions. Additionally, it features fast switching speeds, which is critical for applications requiring high-frequency operation such as switch-mode power supplies (SMPS), DC-DC converters, and motor drives.

The DMN3024SFG-7 is also characterized by its low gate charge (Q<sub>G), which reduces the power required to drive the MOSFET, thereby conserving energy in the system. This, along with its other features, makes the DMN3024SFG-7 an environmentally friendly option that aligns with modern energy-saving standards.

Overall, the DMN3024SFG-7 from Diodes Incorporated is a reliable and efficient solution for designers looking to optimize their power management systems. Its combination of low on-resistance, high current capability, and fast switching speeds in a compact package make it an ideal choice for a multitude of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
220+ $0.2273 $50.0060
475+ $0.2127 $101.0325
735+ $0.2054 $150.9690
1,050+ $0.1907 $200.2350
1,365+ $0.1834 $250.3410
1,705+ $0.1760 $300.0800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 220 pcs
Order Increment : 1 pcs
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