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DMN3025LFG-13

Part No DMN3025LFG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7.5A POWERDI
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 11.6nC @ 10V
Max Input Capacitance 605pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 18 mOhm @ 7.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerDI3333-8
Dimension 8-PowerWDFN
Win Source Part Number 102369-DMN3025LFG-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN3025LFG-13 CAD Model

Description

Overview of DMN3025LFG-13 from Diodes Incorporated

The DMN3025LFG-13 is a high-performance, N-Channel MOSFET designed and manufactured by Diodes Incorporated. This robust semiconductor device is engineered to deliver efficient power management and control in a variety of applications. The DMN3025LFG-13 is well-suited for use in power conversion, load switching, and motor control circuits, among other electronic systems that require efficient energy handling.

Key Features

  • Low On-Resistance: The device offers a low on-resistance, typically noted as RDS(on), which enhances its efficiency by minimizing power losses during operation.
  • High Continuous Drain Current: With a high continuous drain current (ID), this MOSFET can handle significant levels of current, making it ideal for high-power applications.
  • High Threshold Voltage: A high threshold voltage ensures that the MOSFET operates effectively, reducing the likelihood of unintentional turn-on due to noise or fluctuating signals.
  • PowerDI®5060-8 Package: The device comes in a compact PowerDI®5060-8 package, which is designed for optimal thermal performance and space-saving on the circuit board.
  • Lead-Free and RoHS Compliant: Adhering to environmental standards, the DMN3025LFG-13 is lead-free and compliant with the Restriction of Hazardous Substances (RoHS) directive.

Applications

Thanks to its robust design and electrical characteristics, the DMN3025LFG-13 is suitable for a wide range of applications, including:

  • DC/DC Converters
  • Power Supply Circuits
  • Motor Drives
  • Load Switching
  • Battery Management Systems
  • Computing and Server Applications

Electrical Specifications

Some of the key electrical specifications of the DMN3025LFG-13 include:

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 24A
  • Power Dissipation (PD): 3.1W
  • RDS(on): As low as 8.5mΩ at VGS = 10V

Engineered for efficiency and reliability, the DMN3025LFG-13 MOSFET from Diodes Incorporated is a top choice for designers looking to optimize their power management systems with a component that offers both performance and practicality.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.2850 $51.3000
430+ $0.2339 $100.5770
665+ $0.2266 $150.6890
915+ $0.2193 $200.6595
1,180+ $0.2120 $250.1600
1,580+ $0.1901 $300.3580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,002 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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