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DMN3030LFG-13

Part No DMN3030LFG-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description DMN3030LFG-13
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.4 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 751 pF @ 10 V
Power Dissipation (Max) 900mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerVDFN
Base Product Number DMN3030
Standard Package 1 pcs
ECCN OBSOLETE
Win Source Part Number 109800-DMN3030LFG-13
Ultra Librarian 3D Model Ultra Librarian DMN3030LFG-13 CAD Model

Description

Product Overview: DMN3030LFG-13 from Diodes Incorporated

The DMN3030LFG-13, manufactured by Diodes Incorporated, is a high-performance, N-Channel MOSFET that offers efficient power management for a wide range of applications. This MOSFET is designed to deliver the reliability and efficiency needed in modern electronic circuits, making it an ideal choice for designers looking to optimize their power systems.

Key Features

  • Low On-Resistance: The DMN3030LFG-13 features a low on-resistance (RDS(on)), which translates to reduced power loss and improved energy efficiency during operation.
  • High Continuous Drain Current: It can handle a high continuous drain current (ID), providing robust performance for high-power applications.
  • PowerDI5060-8 Package: Encased in a PowerDI5060-8 package, this MOSFET offers a compact footprint while ensuring excellent thermal performance.
  • Fast Switching Speed: With its fast switching capabilities, the DMN3030LFG-13 minimizes switching losses and is suitable for high-speed circuit designs.
  • Low Threshold Voltage: The device operates at a low threshold voltage (VGS(th)), making it compatible with low-voltage drive signals and reducing power consumption.

Applications

The DMN3030LFG-13 is versatile and can be used in various applications, including:

  • Power Management Circuits
  • DC/DC Converters
  • Load Switches
  • Motor Drives
  • Computing Systems
  • Telecommunication Equipment

Product Specifications

Parameter Value
VDS 30V
RDS(on) 8.5 mΩ at VGS = 10V
ID 25A
Package PowerDI5060-8

In conclusion, the DMN3030LFG-13 MOSFET from Diodes Incorporated stands out for its efficiency, thermal management, and high-speed performance, catering to the needs of contemporary electronic designs that demand compact, energy-efficient power solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6771 $50.7825
180+ $0.5556 $100.0080
280+ $0.5382 $150.6960
385+ $0.5209 $200.5465
500+ $0.5035 $251.7500
665+ $0.4514 $300.1810
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,600 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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