This MOSFET electronic component is manufactured by Toshiba Semiconductor and Storage.

• It comes in tube/rail packaging and has a through-hole mounting.
• Its power dissipation (max) is 30W (Tc) and it falls under the category of discrete semiconductor products.
• The drive voltage (max Rds On, min Rds On) is 10V and it is currently active in the market.
• It has a temperature range of -150°C (TJ) and comes in a TO-220SIS case/package.
• Its dimensions are TO-220-3 Full Pack and its drain-source breakdown voltage is 500V.
• The continuous drain current @ 25°C is 4A (Ta) and the gate-source threshold voltage is 4.4V @ 1mA.
• The maximum gate charge is 9nC @ 10V and the maximum input capacitance is 380pF @ 25V.
• The maximum gate-source voltage is ±30V and the maximum Rds On @ Id,Vgs is 2 Ohm @ 2A, 10V.
• Its popularity in the market is medium and there is a 43% threat of fake products in the open market.
• The supply and demand status is balanced.