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DMN3032LFDB-7

Part No DMN3032LFDB-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6.2A UDFN2020-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 32 Weeks
Features Mosfet Array 2 N-Channel (Dual) 30V 6.2A 1W Surface Mount U-DFN2020-6 (Type B)
Manufacturer Diodes Incorporated
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 6-UDFN Exposed Pad
Case / Package U-DFN2020-6 (Type B)
Family Name DMN3032
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMN3032LFDB-7-ND, DMN3032LFDB-7DICT, DMN3032LFDB-7DIDKR, DMN3032LFDB-7DITR
Quantity per package 3000
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 868996-DMN3032LFDB-7
Ultra Librarian 3D Model Ultra Librarian DMN3032LFDB-7 CAD Model

Description

Product Overview: DMN3032LFDB-7

The DMN3032LFDB-7 is a high-performance, N-Channel MOSFET produced by Diodes Incorporated, a leading manufacturer in the semiconductor industry. This product is designed to offer efficient power management and switching with its advanced features, making it suitable for a variety of applications, including power supplies, load switches, and power management tasks.

Key Features

  • Voltage and Current: The DMN3032LFDB-7 operates at a drain-source voltage (VDS) of 30V, with a continuous drain current (ID) of up to 6.5A, ensuring reliable performance in demanding environments.
  • Low On-Resistance: It boasts a low on-resistance (RDS(on)) of just 20mΩ at VGS = 10V, which minimizes power loss and improves overall efficiency.
  • Power Dissipation: With a power dissipation of 1.25W, this MOSFET can handle significant power levels, making it ideal for high-power applications.
  • Advanced Packaging: The DMN3032LFDB-7 is available in a small form factor DFN2020B-6 (Type B) package, which is designed for space-saving on PCBs without compromising performance.
  • Thermal Management: Excellent thermal performance is ensured thanks to its power package that aids in heat dissipation during operation.
  • High-Speed Switching: This MOSFET is optimized for fast switching speeds, which is critical for reducing switching losses in high-frequency applications.

Applications

The DMN3032LFDB-7 is versatile and can be used in a range of electronic devices. Some of the common applications include:

  • DC/DC Converters
  • Power Management Systems
  • Battery Powered Devices
  • Motor Control Circuits
  • Load/Power Switching

Reliability and Quality

Diodes Incorporated is committed to delivering high-quality products. The DMN3032LFDB-7 is manufactured under strict quality control standards, ensuring reliability and performance consistency. It is RoHS compliant, reflecting a commitment to environmental sustainability and safety.

In conclusion, the DMN3032LFDB-7 from Diodes Incorporated is an excellent choice for designers looking for a robust, efficient, and compact N-Channel MOSFET suitable for a wide range of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
315+ $0.1610 $50.7150
760+ $0.1322 $100.4720
1,175+ $0.1280 $150.4000
1,615+ $0.1239 $200.0985
2,090+ $0.1198 $250.3820
2,795+ $0.1074 $300.1830
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50,995 pieces
MOQ: 315 pcs
Order Increment : 1 pcs
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