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DMN3067LW-13

Part No DMN3067LW-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2.6A SOT-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1196881-DMN3067LW-13
Manufacturer Diodes Incorporated
Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-323
Package / Case SC-70, SOT-323
Ultra Librarian 3D Model Ultra Librarian DMN3067LW-13 CAD Model

Description

DMN3067LW-13 MOSFET by Diodes Incorporated

The DMN3067LW-13 is a high-performance, N-Channel enhancement mode Field Effect Transistor (FET) brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is a part of Diodes Incorporated's extensive range of power management devices, designed to cater to a wide array of power requirements across various electronic applications.

Constructed with advanced trench technology, the DMN3067LW-13 achieves superior switching performance and robust thermal characteristics, making it an ideal choice for high-efficiency power management tasks. This device is particularly well-suited for applications that require a compact footprint without compromising on power handling and efficiency.

Main Features of the DMN3067LW-13:

  • Low On-Resistance: The device offers a low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency in applications such as DC-DC converters, power supplies, and motor drives.
  • High Continuous Drain Current: With the capability to handle a high continuous drain current (ID), this MOSFET can manage larger loads, making it suitable for high-power applications.
  • Low Threshold Voltage: A low threshold voltage ensures that the device can be easily driven at lower gate voltages, which is beneficial for battery-operated devices and low-voltage circuits.
  • Advanced Trench Technology: The use of advanced trench technology not only enhances the switching characteristics but also improves thermal performance, allowing for better reliability and longevity of the device.
  • RoHS Compliant: The DMN3067LW-13 is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring that it does not contain harmful substances and is environmentally friendly.

The DMN3067LW-13 is housed in a compact SOT-323 package, which is suitable for space-constrained applications. Its small form factor, combined with its high-performance specifications, makes it a versatile component for designing energy-efficient power management systems in portable electronics, computing devices, lighting systems, and much more.

With its balance of efficiency, power handling, and compact size, the DMN3067LW-13 from Diodes Incorporated stands out as a reliable and effective solution for modern electronic designs requiring high-quality, high-performance power MOSFETs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
450+ $0.1112 $50.0400
1,100+ $0.0913 $100.4300
1,700+ $0.0884 $150.2800
2,340+ $0.0856 $200.3040
3,025+ $0.0827 $250.1675
4,045+ $0.0742 $300.1390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,734 pieces
MOQ: 450 pcs
Order Increment : 1 pcs
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