DMN3070SSN-7 N-Channel Enhancement Mode Field Effect Transistor

The DMN3070SSN-7 is a high-performance, N-channel enhancement mode field effect transistor (FET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality semiconductor products. This MOSFET is engineered to provide efficient power control and conversion in a wide range of electronic applications.

Key Features

• Low On-Resistance: The DMN3070SSN-7 offers a low on-resistance of typically 24 mΩ at VGS = 10V, which enhances its efficiency by minimizing power loss during operation.
• High Continuous Drain Current: It supports a high continuous drain current of up to 7.3A, making it suitable for handling high power applications.
• Low Gate Threshold Voltage: The transistor has a low gate threshold voltage (VGS(th)) between 1.0V to 2.5V, which allows for easy drive capability.
• Fast Switching: It is designed for fast switching applications with a typical turn-on delay time of 6ns and turn-off delay time of 18ns.
• High Thermal Performance: With an operating junction temperature range of -55°C to +150°C, the DMN3070SSN-7 is capable of withstanding high-temperature environments.

Applications

The DMN3070SSN-7 MOSFET is versatile and can be used in various applications, including:

• Power Management Circuits
• DC/DC Converters
• Load Switches
• Battery Management Systems
• Motor Drives
• Computing and Networking Systems

Package and Quality

This MOSFET comes in a space-saving SOT-23 package, making it ideal for compact designs. It is also RoHS compliant, ensuring adherence to the latest environmental standards and regulations. Diodes Incorporated is committed to delivering products that meet the highest standards of quality and reliability.

Ordering Information

To purchase the DMN3070SSN-7, or to request samples for testing, customers can contact Diodes Incorporated or their authorized distributors. Detailed product specifications and datasheets are available on the Diodes Incorporated website for further information.