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DMN30H4D0L-7

Part No DMN30H4D0L-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 300V 250MA SOT23 / N-Channel 300 V 250mA (Ta) 310mW (Ta) Surface Mount SOT-23-3
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 187.3 pF @ 25 V
Power Dissipation (Max) 310mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number DMN30
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 845105-DMN30H4D0L-7
Ultra Librarian 3D Model Ultra Librarian DMN30H4D0L-7 CAD Model

Description

The DMN30H4D0L-7 is a high-performance, N-Channel enhancement mode Field Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated. This MOSFET is a part of Diodes Incorporated's extensive range of semiconductor products and is known for its efficiency and reliability in various applications. The DMN30H4D0L-7 is housed in a compact SOT-23 package, making it suitable for space-constrained applications.

Key Features:

  • Low On-Resistance: The device offers a low on-resistance of typically 30 mOhms at VGS = 10V, which contributes to its high efficiency and low conduction losses.
  • High Continuous Drain Current: It supports a high continuous drain current (ID) of up to 4.2A, making it capable of handling significant power levels.
  • Low Threshold Voltage: With a low threshold voltage (VGS(th)), the DMN30H4D0L-7 ensures a low gate drive requirement, which can lead to reduced power consumption in certain applications.
  • Fast Switching Speed: The device provides fast switching performance, which is essential for high-frequency applications and can reduce switching losses.
  • High Power Dissipation: It has a power dissipation of 1.25W, which enables the device to handle moderate power levels without overheating.
  • RoHS Compliant: The DMN30H4D0L-7 is RoHS compliant, ensuring that it meets the latest environmental standards and restrictions on hazardous substances.

Applications:

The versatility and efficiency of the DMN30H4D0L-7 make it an excellent choice for a wide range of applications. These include power management tasks, load switches, and high-speed switching circuits in consumer electronics, telecommunications, and portable devices. Additionally, it can be used in DC-DC converters, motor control circuits, and other power-related applications where a high-efficiency, low-voltage operation is required.

Conclusion:

In conclusion, the DMN30H4D0L-7 from Diodes Incorporated represents a blend of performance, efficiency, and compact packaging. Its low on-resistance, high current capability, and fast switching speed make it an ideal choice for designers looking to optimize their power management systems. Whether for industrial, commercial, or consumer electronics, the DMN30H4D0L-7 stands out as a robust and reliable component that can enhance the performance of a wide array of electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3226 $50.0030
380+ $0.2647 $100.5860
590+ $0.2564 $151.2760
810+ $0.2482 $201.0420
1,045+ $0.2399 $250.6955
1,395+ $0.2151 $300.0645
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,234 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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