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DMN32D2LFB4-7

Part No DMN32D2LFB4-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 300MA 3-DFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Input Capacitance 39pF @ 3V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 350mW (Ta)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 100mA, 4V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package X2-DFN1006-3
Dimension 3-XFDFN
Win Source Part Number 084240-DMN32D2LFB4-7
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian DMN32D2LFB4-7 CAD Model

Description

Overview of DMN32D2LFB4-7 MOSFET from Diodes Incorporated

The DMN32D2LFB4-7 is a high-performance, N-Channel MOSFET brought to you by Diodes Incorporated, a leading manufacturer and supplier of high-quality semiconductor products. This MOSFET is designed for a variety of applications, including load switch, power management, and other general-purpose switching applications where high efficiency is required.

Key Features

  • Low On-Resistance: The DMN32D2LFB4-7 features very low on-resistance (R<sub>DS(on)), which translates into lower losses and improved energy efficiency when conducting electrical current.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET can handle high-speed operations, making it suitable for modern, high-frequency power circuits.
  • Low Threshold Voltage: The device operates at a low threshold voltage, ensuring that it can be easily driven by low-voltage logic circuits, broadening its compatibility with various control systems.
  • Small Package Size: The DMN32D2LFB4-7 comes in a compact DFN2020-6 (B) package, which is ideal for space-constrained applications without compromising on performance.

Electrical Characteristics

  • Drain-Source Voltage (V<sub>DS): 30V, which allows it to be used in circuits with moderate voltage requirements.
  • Continuous Drain Current (I<sub>D): 7.2A, providing ample current for a variety of applications.
  • Power Dissipation (P<sub>D): 1.25W, ensuring the MOSFET can handle significant power levels without overheating.

Applications

The DMN32D2LFB4-7 is versatile and can be used in numerous applications such as:

  • Power management for portable devices
  • DC/DC converters
  • Load switches
  • Battery management systems
  • Motor control circuits

With its robust construction and reliable performance, the DMN32D2LFB4-7 from Diodes Incorporated is an excellent choice for designers looking for a MOSFET that delivers both efficiency and versatility. Its small footprint and high-efficiency operation make it an ideal component for modern electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
915+ $0.0547 $50.0505
2,230+ $0.0449 $100.1270
3,450+ $0.0435 $150.0750
4,755+ $0.0421 $200.1855
6,145+ $0.0407 $250.1015
8,220+ $0.0365 $300.0300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 240,298 pieces
MOQ: 915 pcs
Order Increment : 1 pcs
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