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DMN4010LFG-7

Part No DMN4010LFG-7
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 11.5A PWDI3333-8
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 37nC @ 10V
Max Input Capacitance 1810pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 930mW (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 14A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerDI3333-8
Dimension 8-PowerWDFN
Win Source Part Number 1033770-DMN4010LFG-7
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian DMN4010LFG-7 CAD Model

Description

DMN4010LFG-7 N-Channel MOSFET by Diodes Incorporated

The DMN4010LFG-7 is a high-performance N-Channel Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets.

This MOSFET is a testament to Diodes Incorporated's commitment to providing power management solutions that offer both efficiency and reliability. The DMN4010LFG-7 is specifically engineered to handle high continuous drain currents up to 50A, making it an excellent choice for power-intensive applications. It operates at a maximum drain-source voltage (Vds) of 40V, which ensures a wide range of operation for various circuit designs.

One of the key features of the DMN4010LFG-7 is its low on-resistance (Rds(on)), which stands at just 8.5mΩ at Vgs of 10V. This low resistance minimizes power loss and heat generation, thus enhancing the overall efficiency of the device. Additionally, the MOSFET is housed in a compact PowerDI5060-8 package, which not only saves valuable board space but also provides excellent thermal performance and ruggedness under high-current conditions.

With a gate threshold voltage (Vgs(th)) of 1.5V, the DMN4010LFG-7 is suitable for low-voltage drive applications. Its fast switching speed is another attribute that makes it ideal for high-frequency power switching applications, such as DC-DC converters, power supplies, and motor control circuits.

The DMN4010LFG-7 is also characterized by its high reliability, thanks to features like its 100% UIS (Unclamped Inductive Switching) tested design and its ability to withstand high energy pulses in the avalanche and commutation modes. This robustness is crucial for applications that may experience unexpected voltage transients.

Overall, the DMN4010LFG-7 from Diodes Incorporated is a versatile and efficient solution for designers looking to optimize their power management systems. Its combination of low on-resistance, high current capacity, and compact packaging makes it a valuable component in a wide array of electronic applications.

  • Product: DMN4010LFG-7
  • Manufacturer: Diodes Incorporated
  • Category: N-Channel MOSFET
  • Continuous Drain Current (Id): 50A
  • Drain-Source Voltage (Vds): 40V
  • On-Resistance (Rds(on)): 8.5mΩ at Vgs = 10V
  • Package: PowerDI5060-8
  • Applications: Power management, DC-DC converters, power supplies, motor control

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Pricing & Ordering

Quantity Unit Price Ext. Price
295+ $0.1707 $50.3565
715+ $0.1401 $100.1715
1,110+ $0.1357 $150.6270
1,525+ $0.1314 $200.3850
1,970+ $0.1270 $250.1900
2,640+ $0.1138 $300.4320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,961 pieces
MOQ: 295 pcs
Order Increment : 1 pcs
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