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DMN4036LK3-13

Part No DMN4036LK3-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 8.5A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Diodes Incorporated
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 9.2nC @ 10V
Max Input Capacitance 453pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.12W (Ta)
Maximum Rds On at Id,Vgs 36 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 080581-DMN4036LK3-13
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian DMN4036LK3-13 CAD Model

Description

Product Overview: DMN4036LK3-13 from Diodes Incorporated

The DMN4036LK3-13 is a high-performance, N-channel enhancement mode field-effect transistor (FET) designed and manufactured by Diodes Incorporated, a leading global provider of discrete, logic, analog, and mixed-signal semiconductors. This particular MOSFET is part of Diodes Incorporated's extensive range of power management devices, known for their reliability and efficiency.

Key Features

  • Low On-Resistance: The DMN4036LK3-13 boasts an extremely low on-resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency, making it an ideal choice for power-intensive applications.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D), this MOSFET can handle significant power, suitable for a wide range of electronic circuits and power systems.
  • High Threshold Voltage: The device features a high threshold voltage (V<sub>GS(th)), ensuring that the MOSFET operates effectively under a range of conditions and reduces the risk of unintentional turn-on.
  • Low Input Capacitance: A low input capacitance (C<sub>iss) reduces the drive power required and improves the switching performance, which is critical for high-speed switching applications.
  • Advanced Packaging: Enclosed in a compact and robust PowerDI3333-8 package, the DMN4036LK3-13 is designed for surface-mount technology (SMT), offering excellent thermal performance and space-saving on PCBs.

Applications

The DMN4036LK3-13 is versatile and can be used in a variety of applications. It is particularly well-suited for:

  • Power supply circuits
  • DC-DC converters
  • Motor drives
  • Battery management systems
  • Load switches
  • High-efficiency power management designs

With its robust design and superior electrical characteristics, the DMN4036LK3-13 from Diodes Incorporated is a top choice for designers looking to optimize power usage in their electronic designs. Its combination of low on-resistance, high drain current capability, and efficient packaging makes it a highly effective component for a wide range of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
130+ $0.3887 $50.5310
315+ $0.3190 $100.4850
490+ $0.3090 $151.4100
670+ $0.2990 $200.3300
865+ $0.2891 $250.0715
1,160+ $0.2592 $300.6720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,170 pieces
MOQ: 130 pcs
Order Increment : 1 pcs
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