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SIR870DP-T1-GE3

Part No SIR870DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 60A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2840 pF @ 50 V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SIR870
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 667328-SIR870DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SIR870DP-T1-GE3 CAD Model

Description

The 667328-SIR870DP-T1-GE3 is a N-Channel MOSFET transistor from Vishay's TrenchFET series.

  • Category: Discrete semiconductor products
  • Application: Transistors and FETs
  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 60A @ 25°C
  • On-Resistance (Rds On): 6mOhm @ 20A, 10V
  • Gate Charge (Qg): 84nC @ 10V
  • Input Capacitance (Ciss): 2840pF @ 50V
  • Temperature Range: -55°C to 150°C
  • Mounting: Surface Mountable
  • Package: PowerPAK SO-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8577 $65.0195
80+ $1.5244 $121.9520
120+ $1.4767 $177.2040
165+ $1.4291 $235.8015
210+ $1.3814 $290.0940
280+ $1.2385 $346.7800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,100 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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