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DMN6040SK3Q-13

Part No DMN6040SK3Q-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET BVDSS: 41V-60V TO252 T&R
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1287 pF @ 25 V
Power Dissipation (Max) 42W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number DMN6040
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 917158-DMN6040SK3Q-13
Ultra Librarian 3D Model Ultra Librarian DMN6040SK3Q-13 CAD Model

Description

DMN6040SK3Q-13 N-Channel MOSFET by Diodes Incorporated

The DMN6040SK3Q-13 is a high-performance N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for power management applications where efficiency is key. This semiconductor device is part of Diodes Incorporated's extensive MOSFET product line, which is renowned for its reliability and performance in a wide range of electronic circuits.

Key Features

  • Low On-Resistance: The DMN6040SK3Q-13 features a low on-resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency, making it an excellent choice for power-intensive applications.
  • High Continuous Drain Current: It supports a high continuous drain current (I<sub>D), enabling it to handle significant power without performance degradation, which is crucial for maintaining system reliability.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is suitable for high-frequency applications, providing swift transitions that reduce switching losses.
  • Thermal Management: The device comes in a thermally efficient package that aids in heat dissipation, ensuring stable operation even under high load conditions.
  • RoHS Compliant: The DMN6040SK3Q-13 meets RoHS standards, ensuring that it is manufactured without hazardous substances, making it an environmentally friendly choice for electronic designs.

Applications

Due to its robust performance characteristics, the DMN6040SK3Q-13 is ideally suited for a variety of applications, including:

  • DC/DC Converters
  • Power Supply Circuits
  • Motor Drives
  • Load Switches
  • Battery Management Systems
  • Computing and Server Applications

Product Specifications

The DMN6040SK3Q-13 operates with a maximum drain-source voltage (V<sub>DS) of 60V, which provides a good margin for most low to medium voltage applications. Its maximum R<sub>DS(on) is typically at a low threshold, ensuring that power losses are kept to a minimum during operation. The device is available in a surface-mount package, which is ideal for compact PCB layouts and modern electronic assemblies.

With its combination of efficiency, reliability, and environmental compliance, the DMN6040SK3Q-13 from Diodes Incorporated stands out as a superior choice for designers looking to optimize their power management systems.

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